Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
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Transistors - Special Purpose (162)

Records 64,903

Page 136/2164

Part Number	Description	In Stock
MRF8372GR1 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 870MHZ 8SO Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 9.5dB Power - Max: 2.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock8,442
MRF8372GR2 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 870MHZ 8SO Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 9.5dB Power - Max: 2.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock6,282
MRF8372MR1 Microsemi	Transistors - Bipolar (BJT) - RF TRANS NPN 16V 200MA Manufacturer: Microsemi Corporation Series: - Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock5,652
MRF8372R1 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 870MHZ 8SO Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 9.5dB Power - Max: 2.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock2,898
MRF8372R2 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 870MHZ 8SO Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 9.5dB Power - Max: 2.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock4,752
MRF904 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 4GHZ TO72 Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 4GHz Noise Figure (dB Typ @ f): 1.5dB @ 450MHz Gain: 6.5dB ~ 10.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	In Stock2,070
MRFC544 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation Series: - Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock3,562
MRFC545 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation Series: - Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock4,068
MS1001 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 18V 30MHZ M174 Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 13dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M174 Supplier Device Package: M174	In Stock4,500
MS1001A Microsemi	Transistors - Bipolar (BJT) - RF TRANS RF BIPO 270W 20A Manufacturer: Microsemi Corporation Series: - Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock8,676
MS1003 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 18V 175MHZ M111 Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 136MHz ~ 175MHz Noise Figure (dB Typ @ f): - Gain: 6dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: M111 Supplier Device Package: M111	In Stock8,190
MS1004 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 30MHZ M177 Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 14.5dB Power - Max: 330W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 6V Current - Collector (Ic) (Max): 40A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M177 Supplier Device Package: M177	In Stock8,298
MS1006 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 30MHZ M135 Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 14dB Power - Max: 127W DC Current Gain (hFE) (Min) @ Ic, Vce: 19 @ 1.4A, 6V Current - Collector (Ic) (Max): 3.25A Operating Temperature: 200°C Mounting Type: Stud Mount Package / Case: M135 Supplier Device Package: M135	In Stock5,022
MS1007 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 30MHZ M174 Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 14dB Power - Max: 233W DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1.4A, 6V Current - Collector (Ic) (Max): 10A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M174 Supplier Device Package: M174	In Stock3,996
MS1008 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 30MHZ M164 Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 14dB Power - Max: 233W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1.4A, 6V Current - Collector (Ic) (Max): 10A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M164 Supplier Device Package: M164	In Stock8,046
MS1014 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation Series: - Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock5,598
MS1015D Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation Series: - Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock4,140
MS1019 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation Series: - Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock7,308
MS1030 Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation Series: - Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock3,528
MS1030DE Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation Series: - Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock8,946
MS1051 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 18V 30MHZ M174 Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 11dB ~ 13dB Power - Max: 290W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5mA, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M174 Supplier Device Package: M174	In Stock8,190
MS1076 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 35V 30MHZ M174 Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 12dB Power - Max: 320W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 7A, 5V Current - Collector (Ic) (Max): 16A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M174 Supplier Device Package: M174	In Stock7,110
MS1076A Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation Series: - Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock3,186
MS1076C Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation Series: - Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock7,128
MS1087T Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation Series: - Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock7,848
MS1202 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 35V 136MHZ M135 Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 118MHz ~ 136MHz Noise Figure (dB Typ @ f): - Gain: 8.4dB Power - Max: 15W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M135 Supplier Device Package: M135	In Stock6,822
MS1226 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 36V 30MHZ M113 Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 36V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 18dB Power - Max: 80W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 4.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M113 Supplier Device Package: M113	In Stock6,102
MS1227 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 18V 30MHZ M113 Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 15dB Power - Max: 80W DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V Current - Collector (Ic) (Max): 4.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M113 Supplier Device Package: M113	In Stock2,592
MS1261 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 18V 175MHZ M122 Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 12dB Power - Max: 34W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V Current - Collector (Ic) (Max): 2.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: M122 Supplier Device Package: M122	In Stock3,402
MS1336 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 18V 175MHZ M135 Manufacturer: Microsemi Corporation Series: - Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: M135 Supplier Device Package: M135	In Stock3,600

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