MS2553C
For Reference Only
| Part Number | MS2553C |
| PNEDA Part # | MS2553C |
| Description | RF TRANS NPN 25V 1.15GHZ M220 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 7,740 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MS2553C Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | MS2553C |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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MS2553C Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Frequency - Transition | 1.025GHz ~ 1.15GHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | 10.5dB |
| Power - Max | 175W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 500mA, 5V |
| Current - Collector (Ic) (Max) | 4A |
| Operating Temperature | 200°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | M220 |
| Supplier Device Package | M220 |
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Manufacturer Broadcom Limited Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition - Noise Figure (dB Typ @ f) 1dB ~ 1.9dB @ 900MHz ~ 2.4GHz Gain 9dB ~ 15.5dB Power - Max 225mW DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V Current - Collector (Ic) (Max) 50mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package SC-70-3 |
Manufacturer Central Semiconductor Corp Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 25V Frequency - Transition 650MHz Noise Figure (dB Typ @ f) - Gain - Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V Current - Collector (Ic) (Max) - Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23 |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 5.5GHz Noise Figure (dB Typ @ f) 2.5dB @ 1GHz Gain 17dB Power - Max 180W DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 14mA, 10V Current - Collector (Ic) (Max) 30A Operating Temperature 200°C Mounting Type Surface Mount Package / Case M150 Supplier Device Package M150 |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 65V Frequency - Transition 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f) - Gain 9dB Power - Max 87.5W DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) 2.6A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case M115 Supplier Device Package M115 |
