MS652S
For Reference Only
| Part Number | MS652S |
| PNEDA Part # | MS652S |
| Description | RF TRANS NPN 16V 512MHZ M123 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 7,668 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MS652S Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | MS652S |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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MS652S Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 16V |
| Frequency - Transition | 450MHz ~ 512MHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | 10dB |
| Power - Max | 25W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 200mA, 5V |
| Current - Collector (Ic) (Max) | 2A |
| Operating Temperature | 200°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | M123 |
| Supplier Device Package | M123 |
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Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 2.8GHz Noise Figure (dB Typ @ f) 2.5dB @ 800MHz Gain - Power - Max 300mW DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 2mA, 1V Current - Collector (Ic) (Max) 25mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package TO-236AB (SOT23) |
Manufacturer Renesas Electronics America Inc. Series - Transistor Type 5 PNP Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 5.5GHz Noise Figure (dB Typ @ f) 3.5dB @ 1GHz Gain - Power - Max 150mW DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10mA, 2V Current - Collector (Ic) (Max) 65mA Operating Temperature 175°C (TJ) Mounting Type Surface Mount Package / Case 16-VFQFN Exposed Pad Supplier Device Package 16-QFN (3x3) |
