Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1272/2164

Part Number	Description	In Stock
IPB015N04LGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A TO263-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 346nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,076
IPB015N04NGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A TO263-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 20V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock22,338
IPB015N08N5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 120A TO263-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 279µA Gate Charge (Qg) (Max) @ Vgs: 222nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 16900pF @ 40V FET Feature: - Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock3,726
IPB016N06L3GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 180A TO263-7 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.2V @ 196µA Gate Charge (Qg) (Max) @ Vgs: 166nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 30V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock4,752
IPB017N06N3GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 180A TO263-7 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 196µA Gate Charge (Qg) (Max) @ Vgs: 275nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 30V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock7,326
IPB017N08N5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 120A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 223nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 16900pF @ 40V FET Feature: - Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock23,478
IPB017N10N5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 180A D2PAK-7 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 279µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 15600pF @ 50V FET Feature: - Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock71,544
IPB017N10N5LFATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V D2PAK-7 Manufacturer: Infineon Technologies Series: OptiMOS™-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.1V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 50V FET Feature: - Power Dissipation (Max): 313W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock2,160
IPB019N06L3GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO263-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.2V @ 196µA Gate Charge (Qg) (Max) @ Vgs: 166nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 30V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock12,180
IPB019N08N3GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 180A TO263-7 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14200pF @ 40V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock2,052
IPB020N04NGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 140A TO263-7 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 95µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 20V FET Feature: - Power Dissipation (Max): 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock22,728
IPB020N08N5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 140A TO263-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 208µA Gate Charge (Qg) (Max) @ Vgs: 166nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 40V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock27,000
IPB020N10N5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 120A TO263-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 15600pF @ 50V FET Feature: - Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock22,764
IPB020N10N5LFATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V D2PAK-3 Manufacturer: Infineon Technologies Series: OptiMOS™-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.1V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 50V FET Feature: - Power Dissipation (Max): 313W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,794
IPB020NE7N3GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 120A TO263-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 273µA Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 37.5V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock18,954
IPB021N06N3GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO263-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 196µA Gate Charge (Qg) (Max) @ Vgs: 275nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 30V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,636
IPB022N04LGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 90A TO263-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.2mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 2V @ 95µA Gate Charge (Qg) (Max) @ Vgs: 166nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 20V FET Feature: - Power Dissipation (Max): 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,860
IPB023N04NGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 90A TO263-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 95µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 20V FET Feature: - Power Dissipation (Max): 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,798
IPB023N06N3GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 140A TO263-7 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 141µA Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 16000pF @ 30V FET Feature: - Power Dissipation (Max): 214W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock6,696
IPB024N08N5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V TO263-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 154µA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8970pF @ 40V FET Feature: - Power Dissipation (Max): 214W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,556
IPB024N10N5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 180A TO263-7 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 3.8V @ 183µA Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 50V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	In Stock2,430
IPB025N08N3GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 120A TO263-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14200pF @ 40V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,780
IPB025N10N3GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 180A TO263-7 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 50V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock6,876
IPB025N10N3GE8187ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 180A TO263-7 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 50V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock6,516
IPB026N06NATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 25A TO263-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.8V @ 75µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 30V FET Feature: - Power Dissipation (Max): 3W (Ta), 136W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,528
IPB027N10N3GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 120A TO263-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 50V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,230
IPB027N10N5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 120A D2PAK-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 184µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 50V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,844
IPB029N06N3GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO263-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 118µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V FET Feature: - Power Dissipation (Max): 188W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock17,856
IPB029N06N3GE8187ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO263-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 118µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V FET Feature: - Power Dissipation (Max): 188W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,066
IPB030N08N3GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 160A TO263-7 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 155µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 40V FET Feature: - Power Dissipation (Max): 214W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock14,670

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