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IPB022N04LGATMA1

IPB022N04LGATMA1

For Reference Only

Part Number IPB022N04LGATMA1
PNEDA Part # IPB022N04LGATMA1
Description MOSFET N-CH 40V 90A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,860
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB022N04LGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB022N04LGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB022N04LGATMA1, IPB022N04LGATMA1 Datasheet (Total Pages: 10, Size: 680.66 KB)
PDFIPB022N04LGATMA1 Datasheet Cover
IPB022N04LGATMA1 Datasheet Page 2 IPB022N04LGATMA1 Datasheet Page 3 IPB022N04LGATMA1 Datasheet Page 4 IPB022N04LGATMA1 Datasheet Page 5 IPB022N04LGATMA1 Datasheet Page 6 IPB022N04LGATMA1 Datasheet Page 7 IPB022N04LGATMA1 Datasheet Page 8 IPB022N04LGATMA1 Datasheet Page 9 IPB022N04LGATMA1 Datasheet Page 10

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IPB022N04LGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.2mOhm @ 90A, 10V
Vgs(th) (Max) @ Id2V @ 95µA
Gate Charge (Qg) (Max) @ Vgs166nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds13000pF @ 20V
FET Feature-
Power Dissipation (Max)167W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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