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IPB024N10N5ATMA1

IPB024N10N5ATMA1

For Reference Only

Part Number IPB024N10N5ATMA1
PNEDA Part # IPB024N10N5ATMA1
Description MOSFET N-CH 100V 180A TO263-7
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,430
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB024N10N5ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB024N10N5ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPB024N10N5ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2.4mOhm @ 90A, 10V
Vgs(th) (Max) @ Id3.8V @ 183µA
Gate Charge (Qg) (Max) @ Vgs138nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10200pF @ 50V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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