IPB024N10N5ATMA1
For Reference Only
| Part Number | IPB024N10N5ATMA1 |
| PNEDA Part # | IPB024N10N5ATMA1 |
| Description | MOSFET N-CH 100V 180A TO263-7 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,430 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPB024N10N5ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPB024N10N5ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPB024N10N5ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 90A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 183µA |
| Gate Charge (Qg) (Max) @ Vgs | 138nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 10200pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7 |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 13A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1180pF @ 10V FET Feature - Power Dissipation (Max) 2.7W (Ta), 28W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-PQFN (3.3x3.3), Power33 Package / Case 8-PowerTDFN |
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Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 959pF @ 25V FET Feature - Power Dissipation (Max) 88W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
