Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPB016N06L3GATMA1

IPB016N06L3GATMA1

For Reference Only

Part Number IPB016N06L3GATMA1
PNEDA Part # IPB016N06L3GATMA1
Description MOSFET N-CH 60V 180A TO263-7
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,752
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 24 - Mar 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB016N06L3GATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB016N06L3GATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPB016N06L3GATMA1 Datasheet
  • where to find IPB016N06L3GATMA1
  • Infineon Technologies

  • Infineon Technologies IPB016N06L3GATMA1
  • IPB016N06L3GATMA1 PDF Datasheet
  • IPB016N06L3GATMA1 Stock

  • IPB016N06L3GATMA1 Pinout
  • Datasheet IPB016N06L3GATMA1
  • IPB016N06L3GATMA1 Supplier

  • Infineon Technologies Distributor
  • IPB016N06L3GATMA1 Price
  • IPB016N06L3GATMA1 Distributor

IPB016N06L3GATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id2.2V @ 196µA
Gate Charge (Qg) (Max) @ Vgs166nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds28000pF @ 30V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

The Products You May Be Interested In

IXFQ14N80P

IXYS

Manufacturer

IXYS

Series

HiPerFET™, PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

720mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

61nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3900pF @ 25V

FET Feature

-

Power Dissipation (Max)

400W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

BTS113ANKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TEMPFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

11.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V

Rds On (Max) @ Id, Vgs

170mOhm @ 5.8A, 4.5V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

560pF @ 25V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

P-TO220AB

Package / Case

TO-220-3

IRFS450B

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

9.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

390mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

113nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3800pF @ 25V

FET Feature

-

Power Dissipation (Max)

96W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PF

Package / Case

TO-3P-3 Full Pack

2N7002KT7G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

380mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.6Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.7nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

45pF @ 20V

FET Feature

-

Power Dissipation (Max)

300mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

STL16N60M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

355mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

704pF @ 100V

FET Feature

-

Power Dissipation (Max)

52W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (5x6) HV

Package / Case

8-PowerVDFN

Recently Sold

954206AGLF

954206AGLF

IDT, Integrated Device Technology

IC TIMING CTRL HUB P4 56-TSSOP

MM3Z5V1ST1G

MM3Z5V1ST1G

ON Semiconductor

DIODE ZENER 5.1V 300MW SOD323

ADCMP356YKSZ-REEL7

ADCMP356YKSZ-REEL7

Analog Devices

IC COMP/REF PP ACTIVE HI SC70-4

20IMX35D12D12-8G

20IMX35D12D12-8G

Bel Power Solutions

DC DC CONVERTER 12V 12V 12V 35W

742792662

742792662

Wurth Electronics

FERRITE BEAD 1 KOHM 0603 1LN

M2GL005-TQ144I

M2GL005-TQ144I

Microsemi

IC FPGA 84 I/O 144TQFP

ABM8-25.000MHZ-D2-T

ABM8-25.000MHZ-D2-T

Abracon

CRYSTAL 25.000MHZ 18PF SMD

SR1LARU

SR1LARU

STMicroelectronics

IC SMART RESET 4PIN 6.0S 6UDFN

MMBD7000LT1G

MMBD7000LT1G

ON Semiconductor

DIODE ARRAY GP 100V 200MA SOT23

MPXM2010GS

MPXM2010GS

NXP

SENS PRESSURE 1.45 PSI MAX MPAK

CM1230-02CP

CM1230-02CP

ON Semiconductor

TVS DIODE 3.3V 9.8V 4WLCSP

SMBJ12CA-TR

SMBJ12CA-TR

STMicroelectronics

TVS DIODE 12V 25.3V SMB