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IPB016N06L3GATMA1

IPB016N06L3GATMA1

For Reference Only

Part Number IPB016N06L3GATMA1
PNEDA Part # IPB016N06L3GATMA1
Description MOSFET N-CH 60V 180A TO263-7
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,752
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB016N06L3GATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB016N06L3GATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPB016N06L3GATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id2.2V @ 196µA
Gate Charge (Qg) (Max) @ Vgs166nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds28000pF @ 30V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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