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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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FDD3670
FDD3670

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 34A D-PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 7.3A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock2,736
FDD3672
FDD3672

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 44A D-PAK

  • Manufacturer: ON Semiconductor
  • Series: UltraFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 44A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 135W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock2,160
FDD3672-F085
FDD3672-F085

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 44A DPAK-3

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101, UltraFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 6V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1635pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 144W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock6,282
FDD3680
FDD3680

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 25A D-PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 6.1A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock2,304
FDD3682
FDD3682

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 32A D-PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 95W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock8,136
FDD3682-F085
FDD3682-F085

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 32A DPAK

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101, PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 95W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock2,988
FDD3690
FDD3690

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 22A D-PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 64mOhm @ 5.4A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1514pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 60W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock7,650
FDD3706
FDD3706

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 14.7A D-PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1882pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock23,460
FDD3860
FDD3860

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 6.2A DPAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock5,112
FDD390N15A
FDD390N15A

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 26A DPAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 26A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1285pF @ 75V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock2,016
FDD390N15ALZ
FDD390N15ALZ

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 26A DPAK-3

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 26A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 75V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock2,232
FDD3N40TF
FDD3N40TF

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 400V 2A DPAK

  • Manufacturer: ON Semiconductor
  • Series: UniFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock5,616
FDD3N40TM
FDD3N40TM

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 400V 2A DPAK

  • Manufacturer: ON Semiconductor
  • Series: UniFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock5,724
FDD3N50NZTM
FDD3N50NZTM

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V DPAK

  • Manufacturer: ON Semiconductor
  • Series: UniFET-II™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock7,110
FDD4141
FDD4141

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 10.8A DPAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 12.3mOhm @ 12.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2775pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 69W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock249,972
FDD4141-F085
FDD4141-F085

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 10.8A DPAK

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101, PowerTrench®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 12.3mOhm @ 12.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2775pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 69W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock105,918
FDD4141-F085P
FDD4141-F085P

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 10.8A DPAK

  • Manufacturer: ON Semiconductor
  • Series: *
  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
In Stock6,102
FDD4243
FDD4243

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 6.7A DPAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock46,806
FDD4243-F085
FDD4243-F085

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 6.7A DPAK

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101, PowerTrench®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock2,988
FDD4243-F085P
FDD4243-F085P

ON Semiconductor

Transistors - FETs, MOSFETs - Single

PMOS DPAK 40V 44 MOHM

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101, PowerTrench®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock5,688
FDD45AN06LA0
FDD45AN06LA0

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 25A DPAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock3,472
FDD45AN06LA0_F085
FDD45AN06LA0_F085

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 25A DPAK

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101, PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock8,712
FDD4685
FDD4685

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 8.4A DPAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 27mOhm @ 8.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 69W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock224,868
FDD4685-F085
FDD4685-F085

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 32A DPAK

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101, PowerTrench®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 27mOhm @ 8.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock7,470
FDD4685-F085P
FDD4685-F085P

ON Semiconductor

Transistors - FETs, MOSFETs - Single

PMOS DPAK 40V 27 MOHM

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101, PowerTrench®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 27mOhm @ 8.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tj)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock2,538
FDD4685TF_SB82135
FDD4685TF_SB82135

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V DPAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 27mOhm @ 8.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock3,222
FDD4N60NZ
FDD4N60NZ

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N CH 600V 3.4A DPAK

  • Manufacturer: ON Semiconductor
  • Series: UniFET-II™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 114W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock3,420
FDD5353
FDD5353

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 11.5A DPAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock53,448
FDD5612
FDD5612

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 5.4A DPAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 5.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 42W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock20,538
FDD5614P
FDD5614P

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 15A DPAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 759pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 42W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock238,272