Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Records 64,903

Page 1172/2164

Part Number	Description	In Stock
FDC3512 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 3A SSOT-6 Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 40V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock68,586
FDC3512_F095 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 3A 6-SSOT Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 40V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock4,968
FDC3535 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 80V 6-SSOT Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 183mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 40V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock4,194
FDC3612 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 2.6A SSOT-6 Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 50V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock6,174
FDC3612_F095 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 2.6A 6-SSOT Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 50V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock2,160
FDC3616N ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 3.7A SSOT-6 Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1215pF @ 50V FET Feature: - Power Dissipation (Max): 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 FLMP Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP	In Stock7,704
FDC365P ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 35V 4.3A 6-SSOT Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock8,874
FDC5612 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 4.3A SSOT-6 Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock3,636
FDC5612_F095 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 4.3A 6-SSOT Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock5,616
FDC5614P ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 3A SSOT-6 Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 759pF @ 30V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock343,800
FDC5614P_D87Z ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 3A 6SSOT Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 759pF @ 30V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock4,428
FDC5661N-F085 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 6-SSOT Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101, PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 763pF @ 25V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock631,398
FDC602P ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 5.5A SSOT-6 Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock101,322
FDC602P_F095 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 5.5A 6SSOT Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock7,956
FDC604P ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 5.5A SSOT-6 Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 33mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 1926pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock4,464
FDC606P ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 6A SSOT-6 Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 1699pF @ 6V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock659,478
FDC608PZ ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 5.8A SSOT-6 Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock118,860
FDC610PZ ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 4.9A SSOT-6 Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 42mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1005pF @ 15V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock2,196
FDC633N ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5.2A SSOT-6 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 42mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 538pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock3,402
FDC633N_F095 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5.2A 6-SSOT Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 42mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 538pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock4,608
FDC634P ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3.5A SSOT-6 Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 80mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 779pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock25,206
FDC636P ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.8A SSOT-6 Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock2,844
FDC637AN ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 6.2A SSOT-6 Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 1125pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock135,102
FDC637BNZ ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 6.2A 6-SSOT Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 895pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock27,306
FDC638APZ ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.5A SSOT-6 Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock3,906
FDC638P ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.5A SSOT-6 Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock7,686
FDC6392S ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.2A SSOT-6 Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 150mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 960mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock7,092
FDC640P ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.5A SSOT-6 Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 53mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock6,966
FDC640P_F095 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.5A 6-SSOT Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 53mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock3,598
FDC642P ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4A SSOT-6 Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT™-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	In Stock99,024

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