Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 1177/2164

Part Number	Description	In Stock
FDD6676AS ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 90A DPAK Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.7mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V FET Feature: - Power Dissipation (Max): 70W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,698
FDD6680 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12A DPAK Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 56W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,408
FDD6680A ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 14A DPAK Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 15V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock3,906
FDD6680AS ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 55A DPAK Manufacturer: ON Semiconductor Series: PowerTrench®, SyncFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 15V FET Feature: - Power Dissipation (Max): 60W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock3,636
FDD6682 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 75A DPAK Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.2mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 15V FET Feature: - Power Dissipation (Max): 71W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,732
FDD6685 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 11A DPAK Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V FET Feature: - Power Dissipation (Max): 52W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock25,200
FDD6688 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 84A D-PAK Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 84A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3845pF @ 15V FET Feature: - Power Dissipation (Max): 83W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock7,092
FDD6688S ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 88A D-PAK Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 88A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.1mOhm @ 18.5A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 15V FET Feature: - Power Dissipation (Max): 69W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,572
FDD6690A ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12A DPAK Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 56W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock20,370
FDD6696 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 13A D-PAK Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,282
FDD6760A ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET NCH 25V 27A DPAK Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 13V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 65W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock7,614
FDD6770A ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 24A DPAK Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2405pF @ 13V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 65W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock5,310
FDD6776A ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 17.7A DPAK Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 13V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 39W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock8,532
FDD6778A ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 12A DPAK Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 13V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 24W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock7,308
FDD6780 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 16.5A D-PAK Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1590pF @ 13V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 32.6W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock5,922
FDD6780A ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 16.4A DPAK Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 16.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 13V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 32.6W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock7,092
FDD6782A ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 20A DPAK Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10.5mOhm @ 14.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 13V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 31W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock3,024
FDD6796 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 20A D-PAK Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2315pF @ 13V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 42W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock7,758
FDD6796A ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET NCH 25V 20A DPAK Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 13V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 42W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,786
FDD6N20TF ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 4.5A D-PAK Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,356
FDD6N20TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 4.5A DPAK Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock77,004
FDD6N25TF ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 4.4A DPAK Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.2A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock2,106
FDD6N25TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 4.4A DPAK Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.2A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock53,970
FDD6N50FTF ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 5.5A DPAK Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.75A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 25V FET Feature: - Power Dissipation (Max): 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock3,438
FDD6N50FTM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 5.5A DPAK Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.75A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 25V FET Feature: - Power Dissipation (Max): 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock5,004
FDD6N50TF ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 6A DPAK Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V FET Feature: - Power Dissipation (Max): 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock7,362
FDD6N50TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 6A DPAK Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V FET Feature: - Power Dissipation (Max): 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,894
FDD6N50TM-F085 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 6A DPAK Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V FET Feature: - Power Dissipation (Max): 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock2,880
FDD6N50TM-WS ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 6A DPAK Manufacturer: ON Semiconductor Series: UniFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V FET Feature: - Power Dissipation (Max): 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock45,300
FDD7030BL ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 14A DPAK Manufacturer: ON Semiconductor Series: PowerTrench® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 15V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock2,016

«
‹
1
...
1174
1175
1176
1177 (current)
1178
1179
1180
...
2164
›
»

Send Message

Certifications

Transistors

Resources

Support

Social Media

Need Help?
Send Message