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FDD45AN06LA0_F085

FDD45AN06LA0_F085

For Reference Only

Part Number FDD45AN06LA0_F085
PNEDA Part # FDD45AN06LA0_F085
Description MOSFET N-CH 60V 25A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,712
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 6 - Apr 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDD45AN06LA0_F085 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDD45AN06LA0_F085
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDD45AN06LA0_F085, FDD45AN06LA0_F085 Datasheet (Total Pages: 11, Size: 228.09 KB)
PDFFDD45AN06LA0 Datasheet Cover
FDD45AN06LA0 Datasheet Page 2 FDD45AN06LA0 Datasheet Page 3 FDD45AN06LA0 Datasheet Page 4 FDD45AN06LA0 Datasheet Page 5 FDD45AN06LA0 Datasheet Page 6 FDD45AN06LA0 Datasheet Page 7 FDD45AN06LA0 Datasheet Page 8 FDD45AN06LA0 Datasheet Page 9 FDD45AN06LA0 Datasheet Page 10 FDD45AN06LA0 Datasheet Page 11

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FDD45AN06LA0_F085 Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101, PowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C5.2A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs36mOhm @ 25A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds880pF @ 25V
FET Feature-
Power Dissipation (Max)55W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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