FDC5661N-F085
For Reference Only
| Part Number | FDC5661N-F085 |
| PNEDA Part # | FDC5661N-F085 |
| Description | MOSFET N-CH 60V 6-SSOT |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 631,398 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 3 - Apr 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
FDC5661N-F085 Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | FDC5661N-F085 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- FDC5661N-F085 Datasheet
- where to find FDC5661N-F085
- ON Semiconductor
- ON Semiconductor FDC5661N-F085
- FDC5661N-F085 PDF Datasheet
- FDC5661N-F085 Stock
- FDC5661N-F085 Pinout
- Datasheet FDC5661N-F085
- FDC5661N-F085 Supplier
- ON Semiconductor Distributor
- FDC5661N-F085 Price
- FDC5661N-F085 Distributor
FDC5661N-F085 Specifications
| Manufacturer | ON Semiconductor |
| Series | Automotive, AEC-Q101, PowerTrench® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 4.3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 763pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SuperSOT™-6 |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
The Products You May Be Interested In
|
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.5mOhm @ 40A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7350pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta), 115W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer IXYS Series HiPerFET™, PolarHV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 74A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 77mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 9900pF @ 25V FET Feature - Power Dissipation (Max) 1400W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA |
Manufacturer STMicroelectronics Series STripFET™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 142nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer IXYS Series HiPerFET™, PolarP2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 44A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 220mOhm @ 22A, 10V Vgs(th) (Max) @ Id 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 305nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 19000pF @ 25V FET Feature - Power Dissipation (Max) 1250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS264™ Package / Case TO-264-3, TO-264AA |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 49A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 0.95mOhm @ 50A, 10V Vgs(th) (Max) @ Id 1.1V @ 150µA Gate Charge (Qg) (Max) @ Vgs 230nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 10890pF @ 10V FET Feature - Power Dissipation (Max) 3.6W (Ta), 156W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-PQFN (5x6) Package / Case 8-PowerVDFN |
