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FDC636P

FDC636P

For Reference Only

Part Number FDC636P
PNEDA Part # FDC636P
Description MOSFET P-CH 20V 2.8A SSOT-6
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,844
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDC636P Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDC636P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDC636P, FDC636P Datasheet (Total Pages: 4, Size: 200.7 KB)
PDFFDC636P Datasheet Cover
FDC636P Datasheet Page 2 FDC636P Datasheet Page 3 FDC636P Datasheet Page 4

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FDC636P Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs130mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.5nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds390pF @ 10V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT™-6
Package / CaseSOT-23-6 Thin, TSOT-23-6

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