Transistors

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Records 64,903

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Part Number	Description	In Stock
FCH040N65S3-F155 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 65A TO247-3 Manufacturer: ON Semiconductor Series: SuperFET® III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 6.5mA Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4740pF @ 400V FET Feature: - Power Dissipation (Max): 417W (Tc) Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock6,588
FCH041N60E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N CH 600V 77A TO-247 Manufacturer: ON Semiconductor Series: SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 41mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 100V FET Feature: - Power Dissipation (Max): 592W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock20,856
FCH041N60F ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N CH 600V 76A TO247 Manufacturer: ON Semiconductor Series: SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14365pF @ 100V FET Feature: - Power Dissipation (Max): 595W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock9,552
FCH041N60F-F085 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N CH 600V 76A TO247 Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101, SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 347nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V FET Feature: - Power Dissipation (Max): 595W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock7,944
FCH041N65EF-F155 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 76A TO247 Manufacturer: ON Semiconductor Series: FRFET®, SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 5V @ 7.6mA Gate Charge (Qg) (Max) @ Vgs: 298nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12560pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 595W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	In Stock18,912
FCH041N65EFL4 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 76A Manufacturer: ON Semiconductor Series: FRFET®, SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 5V @ 7.6mA Gate Charge (Qg) (Max) @ Vgs: 298nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12560pF @ 100V FET Feature: - Power Dissipation (Max): 595W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-4	In Stock9,468
FCH041N65EFLN4 ON Semiconductor	Transistors - FETs, MOSFETs - Single SF2 650V 44MOHM F TO2474L Manufacturer: ON Semiconductor Series: FRFET®, SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 5V @ 7.6mA Gate Charge (Qg) (Max) @ Vgs: 298nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12560pF @ 100V FET Feature: - Power Dissipation (Max): 595W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	In Stock3,096
FCH041N65F-F085 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 76A TO247 Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101, SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 304nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13566pF @ 25V FET Feature: - Power Dissipation (Max): 595W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock6,372
FCH041N65F-F155 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 76A TO247 Manufacturer: ON Semiconductor Series: FRFET®, SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 5V @ 7.6mA Gate Charge (Qg) (Max) @ Vgs: 294nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13020pF @ 100V FET Feature: - Power Dissipation (Max): 595W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	In Stock7,992
FCH043N60 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 75A TO247 Manufacturer: ON Semiconductor Series: SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 43mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12225pF @ 400V FET Feature: - Power Dissipation (Max): 592W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock8,172
FCH060N80-F155 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 56A TO247 Manufacturer: ON Semiconductor Series: SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 29A, 10V Vgs(th) (Max) @ Id: 4.5V @ 5.8mA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14685pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 500W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	In Stock3,492
FCH067N65S3-F155 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 44A TO247 Manufacturer: ON Semiconductor Series: SuperFET® III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 67mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4.4mA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 400V FET Feature: Super Junction Power Dissipation (Max): 312W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	In Stock7,008
FCH070N60E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 52A Manufacturer: ON Semiconductor Series: SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 166nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4925pF @ 380V FET Feature: - Power Dissipation (Max): 481W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	In Stock9,036
FCH072N60 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 52A TO247 Manufacturer: ON Semiconductor Series: SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 72mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 380V FET Feature: - Power Dissipation (Max): 481W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock10,740
FCH072N60F ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 52A TO247 Manufacturer: ON Semiconductor Series: FRFET®, SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 72mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8660pF @ 100V FET Feature: - Power Dissipation (Max): 481W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock6,012
FCH072N60F-F085 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 52A TO247 Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101, SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 72mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6330pF @ 100V FET Feature: - Power Dissipation (Max): 481W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock8,952
FCH077N65F-F085 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 54A TO247 Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101, SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7162pF @ 25V FET Feature: - Power Dissipation (Max): 481W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock8,658
FCH077N65F-F155 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 54A TO247 Manufacturer: ON Semiconductor Series: FRFET®, SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 5V @ 5.4mA Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7109pF @ 100V FET Feature: - Power Dissipation (Max): 481W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	In Stock2,718
FCH085N80-F155 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 46A TO247 Manufacturer: ON Semiconductor Series: SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4.6mA Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10825pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 446W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock5,742
FCH099N60E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO247 Manufacturer: ON Semiconductor Series: SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99mOhm @ 18.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3465pF @ 380V FET Feature: - Power Dissipation (Max): 357W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock4,896
FCH099N65S3_F155 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 30A TO247-3 Manufacturer: ON Semiconductor Series: SuperFET® III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 400V FET Feature: - Power Dissipation (Max): 227W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock5,400
FCH099N65S3-F155 ON Semiconductor	Transistors - FETs, MOSFETs - Single SF3 650V 99MOHM E TO247L Manufacturer: ON Semiconductor Series: SuperFET® III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 400V FET Feature: - Power Dissipation (Max): 227W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock4,446
FCH104N60 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 37A TO247 Manufacturer: ON Semiconductor Series: SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4165pF @ 380V FET Feature: - Power Dissipation (Max): 357W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock4,068
FCH104N60F ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 37A TO-247 Manufacturer: ON Semiconductor Series: HiPerFET™, Polar™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 100V FET Feature: - Power Dissipation (Max): 357W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock7,020
FCH104N60F-F085 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 37A TO247 Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101, SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4302pF @ 100V FET Feature: - Power Dissipation (Max): 357W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock13,374
FCH110N65F-F155 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 35A TO247 Manufacturer: ON Semiconductor Series: FRFET®, SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id: 5V @ 3.5mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4895pF @ 100V FET Feature: - Power Dissipation (Max): 357W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	In Stock6,786
FCH125N60E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 29A TO247 Manufacturer: ON Semiconductor Series: SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2990pF @ 380V FET Feature: - Power Dissipation (Max): 278W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock4,752
FCH125N65S3R0-F155 ON Semiconductor	Transistors - FETs, MOSFETs - Single SUPERFET3 650V TO247 PKG Manufacturer: ON Semiconductor Series: SuperFET® III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4.5V @ 2.4mA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 400V FET Feature: - Power Dissipation (Max): 181W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock9,060
FCH130N60 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 28A TO247 Manufacturer: ON Semiconductor Series: SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3590pF @ 380V FET Feature: - Power Dissipation (Max): 278W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock8,010
FCH150N65F-F155 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 24A Manufacturer: ON Semiconductor Series: SuperFET® II FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5V @ 2.4mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3737pF @ 100V FET Feature: - Power Dissipation (Max): 298W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	In Stock3,294

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