FCH060N80-F155
For Reference Only
| Part Number | FCH060N80-F155 |
| PNEDA Part # | FCH060N80-F155 |
| Description | MOSFET N-CH 800V 56A TO247 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,492 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 28 - Dec 3 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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FCH060N80-F155 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FCH060N80-F155 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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FCH060N80-F155 Specifications
| Manufacturer | ON Semiconductor |
| Series | SuperFET® II |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 29A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 5.8mA |
| Gate Charge (Qg) (Max) @ Vgs | 350nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 14685pF @ 100V |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 500W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 Long Leads |
| Package / Case | TO-247-3 |
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Manufacturer IXYS Series HiPerFET™, PolarP2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 320mOhm @ 16A, 10V Vgs(th) (Max) @ Id 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 14200pF @ 25V FET Feature - Power Dissipation (Max) 960W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS247™-3 Package / Case TO-247-3 |
