FCH099N65S3_F155
For Reference Only
| Part Number | FCH099N65S3_F155 |
| PNEDA Part # | FCH099N65S3_F155 |
| Description | MOSFET N-CH 650V 30A TO247-3 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 5,400 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FCH099N65S3_F155 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FCH099N65S3_F155 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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FCH099N65S3_F155 Specifications
| Manufacturer | ON Semiconductor |
| Series | SuperFET® III |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs | 61nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2480pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 227W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7mOhm @ 60A, 10V Vgs(th) (Max) @ Id 2V @ 150µA Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4210pF @ 25V FET Feature - Power Dissipation (Max) 210W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101, SuperFET® III, FRFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 65A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 40mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id 5V @ 2.1mA Gate Charge (Qg) (Max) @ Vgs 153nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 5875pF @ 400V FET Feature - Power Dissipation (Max) 446W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 2.8mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 32nC @ 4.5V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 4308pF @ 12V FET Feature - Power Dissipation (Max) 62.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SC-100, SOT-669 |
