Transistors

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Records 64,903

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Part Number	Description	In Stock
DMTH41M8SPS-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V POWERDI506 Manufacturer: Diodes Incorporated Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock5,796
DMTH41M8SPSQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V POWERDI506 Manufacturer: Diodes Incorporated Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock2,232
DMTH43M8LFG-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V POWERDI333 Manufacturer: Diodes Incorporated Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock3,456
DMTH43M8LFG-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V POWERDI333 Manufacturer: Diodes Incorporated Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock4,068
DMTH43M8LFGQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V POWERDI333 Manufacturer: Diodes Incorporated Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock8,928
DMTH43M8LFGQ-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V POWERDI333 Manufacturer: Diodes Incorporated Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,804
DMTH43M8LK3-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 40V 100A TO252 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2693pF @ 20V FET Feature: - Power Dissipation (Max): 88W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock2,430
DMTH43M8LK3Q-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 40V 100A TO252 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2693pF @ 20V FET Feature: - Power Dissipation (Max): 88W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock5,904
DMTH43M8LPS-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V POWERDI506 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2693pF @ 30V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 83W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	In Stock2,898
DMTH43M8LPSQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFETN-CH 40VPOWERDI5060-8 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3.367nF @ 20V FET Feature: - Power Dissipation (Max): 2.7W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	In Stock19,830
DMTH6002LPS-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A POWERDI5060 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6555pF @ 30V FET Feature: - Power Dissipation (Max): 167W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	In Stock2,430
DMTH6004LPS-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 22A PWRDI5060-8 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4515pF @ 30V FET Feature: - Power Dissipation (Max): 2.6W (Ta), 138W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	In Stock40,344
DMTH6004LPSQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A POWERDI5060 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47.4nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4515pF @ 30V FET Feature: - Power Dissipation (Max): 2.6W (Ta), 138W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	In Stock2,664
DMTH6004SCT Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET 60V 100A TO220-3 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.65mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4556pF @ 30V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 136W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock8,442
DMTH6004SCTB-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4556pF @ 30V FET Feature: - Power Dissipation (Max): 4.7W (Ta), 136W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock37,404
DMTH6004SCTBQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A TO263 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4556pF @ 30V FET Feature: - Power Dissipation (Max): 4.7W (Ta), 136W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,798
DMTH6004SK3-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CHA 60V 100A DPAK Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4556pF @ 30V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 180W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock3,600
DMTH6004SK3Q-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET NCH 60V 100A TO252 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4556pF @ 30V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 180W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-4L Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD	In Stock46,836
DMTH6004SPS-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 25A PWRDI5060-8 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4556pF @ 30V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	In Stock5,364
DMTH6004SPSQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A PWRDI5060-8 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4556pF @ 30V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	In Stock4,590
DMTH6005LCT Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET NCH 60V 100A TO220AB Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2962pF @ 30V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock4,914
DMTH6005LK3-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET 60V 90A DPAK Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2962pF @ 30V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 100W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock25,866
DMTH6005LK3Q-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET NCH 60V 90A TO252 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2962pF @ 30V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 100W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-4L Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD	In Stock25,710
DMTH6005LPS-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 41V 60V POWERDI506 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2962pF @ 30V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	In Stock6,426
DMTH6005LPSQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A POWERDI506 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2962pF @ 30V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	In Stock8,226
DMTH6006SPS-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 41V-60V POWERDI506 Manufacturer: Diodes Incorporated Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock2,952
DMTH6009LK3-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 14.2A Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 30V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock7,974
DMTH6009LK3Q-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 14.2A TO252 Manufacturer: Diodes Incorporated Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 30V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,968
DMTH6009LPS-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V POWERDI5060-8 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 30V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 136W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	In Stock2,970
DMTH6009LPSQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 41V-60V POWERDI506 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 30V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 136W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	In Stock8,874

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