Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMTH6004SCTBQ-13

DMTH6004SCTBQ-13

For Reference Only

Part Number DMTH6004SCTBQ-13
PNEDA Part # DMTH6004SCTBQ-13
Description MOSFET N-CH 60V 100A TO263
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 3,798
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMTH6004SCTBQ-13 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMTH6004SCTBQ-13
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMTH6004SCTBQ-13, DMTH6004SCTBQ-13 Datasheet (Total Pages: 7, Size: 585.57 KB)
PDFDMTH6004SCTBQ-13 Datasheet Cover
DMTH6004SCTBQ-13 Datasheet Page 2 DMTH6004SCTBQ-13 Datasheet Page 3 DMTH6004SCTBQ-13 Datasheet Page 4 DMTH6004SCTBQ-13 Datasheet Page 5 DMTH6004SCTBQ-13 Datasheet Page 6 DMTH6004SCTBQ-13 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMTH6004SCTBQ-13 Datasheet
  • where to find DMTH6004SCTBQ-13
  • Diodes Incorporated

  • Diodes Incorporated DMTH6004SCTBQ-13
  • DMTH6004SCTBQ-13 PDF Datasheet
  • DMTH6004SCTBQ-13 Stock

  • DMTH6004SCTBQ-13 Pinout
  • Datasheet DMTH6004SCTBQ-13
  • DMTH6004SCTBQ-13 Supplier

  • Diodes Incorporated Distributor
  • DMTH6004SCTBQ-13 Price
  • DMTH6004SCTBQ-13 Distributor

DMTH6004SCTBQ-13 Specifications

ManufacturerDiodes Incorporated
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs95.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4556pF @ 30V
FET Feature-
Power Dissipation (Max)4.7W (Ta), 136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263AB
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

IRF7701GTRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

11mOhm @ 10A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

5050pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-TSSOP

Package / Case

8-TSSOP (0.173", 4.40mm Width)

MIC94053BC6-TR

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

6V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

84mOhm @ 100mA, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

6V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

270mW (Ta)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-6

Package / Case

6-TSSOP, SC-88, SOT-363

AOD518

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

15A (Ta), 54A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

951pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

62A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

52mOhm @ 31A, 10V

Vgs(th) (Max) @ Id

4.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

104nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

5940pF @ 25V

FET Feature

-

Power Dissipation (Max)

780W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

FDB8444

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 70A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

128nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8035pF @ 25V

FET Feature

-

Power Dissipation (Max)

167W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263AB

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

AT49F040-12TI

AT49F040-12TI

Microchip Technology

IC FLASH 4M PARALLEL 32TSOP

ZXMN3A01FTA

ZXMN3A01FTA

Diodes Incorporated

MOSFET N-CH 30V 1.8A SOT23-3

C8051F120-GQR

C8051F120-GQR

Silicon Labs

IC MCU 8BIT 128KB FLASH 100TQFP

SRV05-4.TCT

SRV05-4.TCT

Semtech

TVS DIODE 5V 17.5V SOT23-6

CP2103-GMR

CP2103-GMR

Silicon Labs

IC CTRLR BRIDGE USB-UART 28MLP

SP3010-04UTG

SP3010-04UTG

Littelfuse

TVS DIODE 6V 12.3V 10UDFN

MMSZ5250BT1G

MMSZ5250BT1G

ON Semiconductor

DIODE ZENER 20V 500MW SOD123

G8QE-1A DC12

G8QE-1A DC12

Omron Electronics Inc-EMC Div

RELAY AUTOMOTIVE SPST 10A 12V

EP3C16F484I7N

EP3C16F484I7N

Intel

IC FPGA 346 I/O 484FBGA

MAX3160EAP+T

MAX3160EAP+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 20SSOP

RCLAMP0502N.TCT

RCLAMP0502N.TCT

Semtech

TVS DIODE 6.5V 30V SLP1210N6

CD143A-SR70

CD143A-SR70

Bourns

TVS DIODE 7V SOT143