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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
Description
In Stock
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DMTH32M5LPS-13
DMTH32M5LPS-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 25V-30V POWERDI506

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 3944pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
In Stock7,848
DMTH32M5LPSQ-13
DMTH32M5LPSQ-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 25V-30V POWERDI506

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 3944pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
In Stock7,920
DMTH4004LK3-13
DMTH4004LK3-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET NCH 40V 100A TO252

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252-4L
  • Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
In Stock7,758
DMTH4004LK3Q-13
DMTH4004LK3Q-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET NCH 40V 100A TO252

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252-4L
  • Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
In Stock6,930
DMTH4004LPS-13
DMTH4004LPS-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET NCH 40V 26A POWERDI

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 82.2nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4508pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 2.6W (Ta), 138W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
In Stock5,778
DMTH4004LPSQ-13
DMTH4004LPSQ-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 31V-40V POWERDI506

  • Manufacturer: Diodes Incorporated
  • Series: *
  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
In Stock6,192
DMTH4004SCTB-13
DMTH4004SCTB-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 31V 40V TO263 T&R

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4305pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AB
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock6,174
DMTH4004SCTBQ-13
DMTH4004SCTBQ-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 100A TO263

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4305pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AB (D²PAK)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock6,174
DMTH4004SK3-13
DMTH4004SK3-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 31V 40V TO252

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4305pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock4,428
DMTH4004SK3Q-13
DMTH4004SK3Q-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET NCH 40V 100A TO252

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4305pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252-4L
  • Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
In Stock5,742
DMTH4004SPS-13
DMTH4004SPS-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 31V 40V POWERDI506

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4305pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
In Stock7,236
DMTH4004SPSQ-13
DMTH4004SPSQ-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 31A PWRDI5060-8

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4305pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
In Stock2,718
DMTH4005SCT
DMTH4005SCT

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET NCH 40V 100A TO220AB

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49.1nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3062pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 125W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
In Stock6,516
DMTH4005SK3-13
DMTH4005SK3-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 95A DPAK

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49.1nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3062pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock4,410
DMTH4005SK3Q-13
DMTH4005SK3Q-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET NCH 40V 95A TO252

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49.1nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3062pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock2,178
DMTH4005SPS-13
DMTH4005SPS-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 31V 40V POWERDI506

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20.9A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49.1nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3062pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 2.6W (Ta), 150W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
In Stock8,028
DMTH4005SPSQ-13
DMTH4005SPSQ-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH POWERDI5060-8

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20.9A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49.1nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3062pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 2.6W (Ta), 150W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
In Stock7,974
DMTH4007LK3-13
DMTH4007LK3-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 31V 40V TO252

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29.1nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1895pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 2.6W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock7,128
DMTH4007LK3Q-13
DMTH4007LK3Q-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 16.8A TO252

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29.1nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1895pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 2.6W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock5,328
DMTH4007LPS-13
DMTH4007LPS-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 31V 40V POWERDI506

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29.1nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1895pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
In Stock2,286
DMTH4007LPSQ-13
DMTH4007LPSQ-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET NCH 40V 15.5A POWERDI

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29.1nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1895pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
In Stock6,300
DMTH4007SK3-13
DMTH4007SK3-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CHA 40V 17.6A DPAK

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2082pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock3,096
DMTH4007SPS-13
DMTH4007SPS-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 31V 40V POWERDI506

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2082pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
In Stock2,592
DMTH4007SPSQ-13
DMTH4007SPSQ-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 15.7A POWERDI506

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2082pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
In Stock7,740
DMTH4008LFDFW-13
DMTH4008LFDFW-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 31V-40V U-DFN2020-

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 990mW (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6
  • Package / Case: 6-UDFN Exposed Pad
In Stock7,956
DMTH4008LFDFW-7
DMTH4008LFDFW-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 31V-40V U-DFN2020-

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 990mW (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6
  • Package / Case: 6-UDFN Exposed Pad
In Stock8,262
DMTH4008LFDFWQ-13
DMTH4008LFDFWQ-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 31V-40V U-DFN2020-

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 990mW (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6
  • Package / Case: 6-UDFN Exposed Pad
In Stock107,838
DMTH4008LFDFWQ-7
DMTH4008LFDFWQ-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 31V-40V U-DFN2020-

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 990mW (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6
  • Package / Case: 6-UDFN Exposed Pad
In Stock8,262
DMTH4008LPS-13
DMTH4008LPS-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 31V-40V POWERDI506

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1088pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
In Stock8,514
DMTH4008LPSQ-13
DMTH4008LPSQ-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Single

MOSFET BVDSS: 31V-40V POWERDI506

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1088pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
In Stock4,662