Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMTH6005LK3-13

DMTH6005LK3-13

For Reference Only

Part Number DMTH6005LK3-13
PNEDA Part # DMTH6005LK3-13
Description MOSFET 60V 90A DPAK
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 25,866
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMTH6005LK3-13 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMTH6005LK3-13
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMTH6005LK3-13, DMTH6005LK3-13 Datasheet (Total Pages: 7, Size: 412.96 KB)
PDFDMTH6005LK3-13 Datasheet Cover
DMTH6005LK3-13 Datasheet Page 2 DMTH6005LK3-13 Datasheet Page 3 DMTH6005LK3-13 Datasheet Page 4 DMTH6005LK3-13 Datasheet Page 5 DMTH6005LK3-13 Datasheet Page 6 DMTH6005LK3-13 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMTH6005LK3-13 Datasheet
  • where to find DMTH6005LK3-13
  • Diodes Incorporated

  • Diodes Incorporated DMTH6005LK3-13
  • DMTH6005LK3-13 PDF Datasheet
  • DMTH6005LK3-13 Stock

  • DMTH6005LK3-13 Pinout
  • Datasheet DMTH6005LK3-13
  • DMTH6005LK3-13 Supplier

  • Diodes Incorporated Distributor
  • DMTH6005LK3-13 Price
  • DMTH6005LK3-13 Distributor

DMTH6005LK3-13 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs47.1nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2962pF @ 30V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 100W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

CSD17322Q5A

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

87A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 8V

Rds On (Max) @ Id, Vgs

8.8mOhm @ 14A, 8V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.3nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

695pF @ 15V

FET Feature

-

Power Dissipation (Max)

3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-VSONP (5x6)

Package / Case

8-PowerTDFN

SUP40N25-60-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

60mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

5000pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.75W (Ta), 300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

STD4NK100Z

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

2.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.8Ohm @ 1.1A, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

601pF @ 25V

FET Feature

-

Power Dissipation (Max)

90W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

MTD6N15T4GV

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

300mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta), 20W (Tc)

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FQB44N10TM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

43.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

39mOhm @ 21.75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

62nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.75W (Ta), 146W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

AD7768-4BSTZ

AD7768-4BSTZ

Analog Devices

IC ADC 24BIT SIGMA-DELTA 64LQFP

SMBJ33CA

SMBJ33CA

Semtech

1-LINE 33V 11.3A TVS DO-214AA

MMSZ5235BT1G

MMSZ5235BT1G

ON Semiconductor

DIODE ZENER 6.8V 500MW SOD123

ALS70A243DF063

ALS70A243DF063

KEMET

CAP ALUM 24000UF 20% 63V SCREW

STPS30L60CT

STPS30L60CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V TO220AB

AS5163-HTSM

AS5163-HTSM

ams

SENSOR ANGLE 360DEG SMD

GQM1555C2D3R3CB01D

GQM1555C2D3R3CB01D

Murata

CAP CER 3.3PF 200V NP0 0402

TNY278PN

TNY278PN

Power Integrations

IC OFFLINE SWIT OVP OTP HV 8DIP

BA30BC0WFP-E2

BA30BC0WFP-E2

Rohm Semiconductor

IC REG LINEAR 3V 1A TO252-5

BYW80-200G

BYW80-200G

ON Semiconductor

DIODE GEN PURP 200V 8A TO220-2

VIPER100A

VIPER100A

STMicroelectronics

IC SWIT PWM SMPS CM PENTAWATT5

914CE2-3

914CE2-3

Honeywell Sensing and Productivity Solutions

SWITCH SNAP ACTION SPDT 5A 240V