2SC5108-Y,LF
For Reference Only
Part Number | 2SC5108-Y,LF |
PNEDA Part # | 2SC5108-Y-LF |
Description | TRANS RF NPN 10V 1GHZ SSM |
Manufacturer | Toshiba Semiconductor and Storage |
Unit Price | Request a Quote |
In Stock | 3,204 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
2SC5108-Y Resources
Brand | Toshiba Semiconductor and Storage |
ECAD Module | |
Mfr. Part Number | 2SC5108-Y,LF |
Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- 2SC5108-Y,LF Datasheet
- where to find 2SC5108-Y,LF
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage 2SC5108-Y,LF
- 2SC5108-Y,LF PDF Datasheet
- 2SC5108-Y,LF Stock
- 2SC5108-Y,LF Pinout
- Datasheet 2SC5108-Y,LF
- 2SC5108-Y,LF Supplier
- Toshiba Semiconductor and Storage Distributor
- 2SC5108-Y,LF Price
- 2SC5108-Y,LF Distributor
2SC5108-Y Specifications
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 10V |
Frequency - Transition | 6GHz |
Noise Figure (dB Typ @ f) | - |
Gain | 11dB |
Power - Max | 100mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V |
Current - Collector (Ic) (Max) | 30mA |
Operating Temperature | - |
Mounting Type | Surface Mount |
Package / Case | SC-75, SOT-416 |
Supplier Device Package | SSM |
The Products You May Be Interested In
Microsemi Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition - Noise Figure (dB Typ @ f) - Gain 20dB Power - Max 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 10mA, 5V Current - Collector (Ic) (Max) 400mA Operating Temperature - Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Microsemi Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 65V Frequency - Transition 890MHz ~ 1GHz Noise Figure (dB Typ @ f) - Gain 8.1dB ~ 8.5dB Power - Max 400W DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) 12A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case 55KT Supplier Device Package 55KT |
Broadcom Manufacturer Broadcom Limited Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 8GHz Noise Figure (dB Typ @ f) 1.3dB ~ 3dB @ 1GHz ~ 4GHz Gain 10dB ~ 18dB Power - Max 500mW DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 8V Current - Collector (Ic) (Max) 60mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 4-SMD (35 micro-X) Supplier Device Package 35 micro-X |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 25V Frequency - Transition 650MHz Noise Figure (dB Typ @ f) - Gain - Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Microsemi Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 28V Frequency - Transition 470MHz ~ 860MHz Noise Figure (dB Typ @ f) - Gain 8.5dB ~ 9.5dB Power - Max 80W DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 1A, 5V Current - Collector (Ic) (Max) 4.5A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case 55JV Supplier Device Package 55JV |