2SC5084YTE85LF

For Reference Only
Part Number | 2SC5084YTE85LF |
PNEDA Part # | 2SC5084YTE85LF |
Description | RF TRANS NPN 12V 7GHZ SC59 |
Manufacturer | Toshiba Semiconductor and Storage |
Unit Price | Request a Quote |
In Stock | 17,244 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
2SC5084YTE85LF Resources
Brand | Toshiba Semiconductor and Storage |
ECAD Module |
![]() |
Mfr. Part Number | 2SC5084YTE85LF |
Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method






- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode





- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- 2SC5084YTE85LF Datasheet
- where to find 2SC5084YTE85LF
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage 2SC5084YTE85LF
- 2SC5084YTE85LF PDF Datasheet
- 2SC5084YTE85LF Stock
- 2SC5084YTE85LF Pinout
- Datasheet 2SC5084YTE85LF
- 2SC5084YTE85LF Supplier
- Toshiba Semiconductor and Storage Distributor
- 2SC5084YTE85LF Price
- 2SC5084YTE85LF Distributor
2SC5084YTE85LF Specifications
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 7GHz |
Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
Gain | 11dB |
Power - Max | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 20mA, 10V |
Current - Collector (Ic) (Max) | 80mA |
Operating Temperature | 125°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SC-59 |
The Products You May Be Interested In
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 35V Frequency - Transition 136MHz Noise Figure (dB Typ @ f) - Gain 4.5dB Power - Max 117W DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 500mA, 5V Current - Collector (Ic) (Max) 9A Operating Temperature 200°C Mounting Type Stud Mount Package / Case M130 Supplier Device Package M130 |
Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 8GHz Noise Figure (dB Typ @ f) 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Gain 19dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 8V Current - Collector (Ic) (Max) 35mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package PG-SOT323-3 |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 7GHz Noise Figure (dB Typ @ f) 1dB @ 500MHz Gain - Power - Max 100mW DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA, 10V Current - Collector (Ic) (Max) 80mA Operating Temperature 125°C (TJ) Mounting Type Surface Mount Package / Case SC-75, SOT-416 Supplier Device Package SSM |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 25V Frequency - Transition 650MHz Noise Figure (dB Typ @ f) - Gain - Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 11GHz Noise Figure (dB Typ @ f) 1.1dB @ 1.8GHz Gain 15.5dB Power - Max 450mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 8V Current - Collector (Ic) (Max) 40mA Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-253-4, TO-253AA Supplier Device Package SOT-143B |