Transistors

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Records 64,903

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Part Number	Description	In Stock
BSS192PL6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 250V 0.19A SOT-89 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V Vgs(th) (Max) @ Id: 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT89 Package / Case: TO-243AA	In Stock6,372
BSS205NH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2.5A SOT23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock94,656
BSS205NL6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2.5A SOT-23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock3,240
BSS209PW Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 580MA SOT-323 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 580mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 550mOhm @ 580mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.5µA Gate Charge (Qg) (Max) @ Vgs: 1.38nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 89.9pF @ 15V FET Feature: - Power Dissipation (Max): 520mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	In Stock6,930
BSS209PWH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.63A SOT-323 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 550mOhm @ 630mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.5µA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 15V FET Feature: - Power Dissipation (Max): 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	In Stock660,582
BSS209PW L6327 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 580MA SOT-323 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 580mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 550mOhm @ 580mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.5µA Gate Charge (Qg) (Max) @ Vgs: 1.38nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 89.9pF @ 15V FET Feature: - Power Dissipation (Max): 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	In Stock8,748
BSS214NH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 1.5A SOT23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock710,976
BSS214NL6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 1.5A SOT-23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock6,642
BSS214NWH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 1.5A SOT323 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	In Stock25,356
BSS214NW L6327 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 1.5A SOT-323 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	In Stock3,618
BSS215PH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1.5A SOT23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock261,420
BSS215PL6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1.5A SOT-23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock4,986
BSS223PWH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 390MA SOT-323 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 390mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1.5µA Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V FET Feature: - Power Dissipation (Max): 250mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	In Stock4,860
BSS223PW L6327 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 390MA SOT-323 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 390mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1.5µA Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V FET Feature: - Power Dissipation (Max): 250mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	In Stock3,600
BSS225 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 0.09A SOT-89 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 131pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT89 Package / Case: TO-243AA	In Stock3,852
BSS225H6327FTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 0.09A SOT-89 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 131pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT89 Package / Case: TO-243AA	In Stock34,026
BSS225H6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 90MA SOT89 Manufacturer: Infineon Technologies Series: SIPMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 131pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT89 Package / Case: TO-243AA	In Stock2,106
BSS225L6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 0.09A SOT-89 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 131pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT89 Package / Case: TO-243AA	In Stock6,120
BSS306NH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 2.3A SOT23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock230,586
BSS306NL6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 2.3A SOT-23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock8,262
BSS308PEH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 2A SOT23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock726,582
BSS308PEL6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 2A SOT-23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock5,580
BSS314PEH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 1.5A SOT23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2V @ 6.3µA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 15V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock66,708
BSS314PEL6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 1.5A SOT23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2V @ 6.3µA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 15V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock3,454
BSS315PH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 1.5A SOT23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock46,572
BSS315PL6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 1.5A SOT-23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock3,762
BSS316NH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 1.4A SOT23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 2V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock326,490
BSS316NL6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 1.4A SOT-23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 2V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock7,038
BSS340NWH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single SMALL SIGNAL+P-CH Manufacturer: Infineon Technologies Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock4,338
BSS606NH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 3.2A SOT89 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id: 2.3V @ 15µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 657pF @ 25V FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT89 Package / Case: TO-243AA	In Stock23,028

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