BSS127H6327XTSA2
For Reference Only
| Part Number | BSS127H6327XTSA2 |
| PNEDA Part # | BSS127H6327XTSA2 |
| Description | MOSFET N-CH 600V 0.021A SOT-23 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 264,072 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
BSS127H6327XTSA2 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | BSS127H6327XTSA2 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- BSS127H6327XTSA2 Datasheet
- where to find BSS127H6327XTSA2
- Infineon Technologies
- Infineon Technologies BSS127H6327XTSA2
- BSS127H6327XTSA2 PDF Datasheet
- BSS127H6327XTSA2 Stock
- BSS127H6327XTSA2 Pinout
- Datasheet BSS127H6327XTSA2
- BSS127H6327XTSA2 Supplier
- Infineon Technologies Distributor
- BSS127H6327XTSA2 Price
- BSS127H6327XTSA2 Distributor
BSS127H6327XTSA2 Specifications
| Manufacturer | Infineon Technologies |
| Series | SIPMOS® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 21mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 500Ohm @ 16mA, 10V |
| Vgs(th) (Max) @ Id | 2.6V @ 8µA |
| Gate Charge (Qg) (Max) @ Vgs | 1nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 28pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
The Products You May Be Interested In
|
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1700V Current - Continuous Drain (Id) @ 25°C 2A (Tj) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 6.5Ohm @ 1A, 0V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 110nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3650pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 568W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-268 Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 14.5mOhm @ 12A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1230pF @ 15V FET Feature - Power Dissipation (Max) 3.2W (Ta), 56W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-PAK (TO-252) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer STMicroelectronics Series DeepGATE™, STripFET™ VI FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.8mOhm @ 40A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer STMicroelectronics Series MDmesh™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1050V Current - Continuous Drain (Id) @ 25°C 3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.5Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 210pF @ 100V FET Feature - Power Dissipation (Max) 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Full Pack Package / Case TO-220-3 Full Pack |
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 122.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5260pF @ 25V FET Feature - Power Dissipation (Max) 230W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
