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BSC026N08NS5ATMA1

BSC026N08NS5ATMA1

For Reference Only

Part Number BSC026N08NS5ATMA1
PNEDA Part # BSC026N08NS5ATMA1
Description MOSFET N-CH 80V 23A 8TDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 205,344
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 24 - Mar 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC026N08NS5ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC026N08NS5ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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BSC026N08NS5ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.8V @ 115µA
Gate Charge (Qg) (Max) @ Vgs92nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6800pF @ 40V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 156W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-6
Package / Case8-PowerTDFN

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