Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 602/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE SCHOTTKY 25V 8A DO215AB |
3,870 |
|
- | Schottky | 25V | 8A | 620mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 25V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
|
|
Microsemi |
DIODE SCHOTTKY 30V 8A DO215AB |
7,110 |
|
- | Schottky | 30V | 8A | 620mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 30V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
|
|
Microsemi |
DIODE SCHOTTKY 35V 8A DO215AB |
5,760 |
|
- | Schottky | 35V | 8A | 620mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 35V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
|
|
Microsemi |
DIODE SCHOTTKY 40V 8A DO215AB |
5,562 |
|
- | Schottky | 40V | 8A | 620mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 40V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
|
|
Microsemi |
DIODE SCHOTTKY 45V 8A DO215AB |
5,058 |
|
- | Schottky | 45V | 8A | 620mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 45V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 8A TO263AB |
5,976 |
|
Automotive, AEC-Q101 | Schottky | 80V | 8A | 720mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 550µA @ 80V | 500pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A D2PAK |
7,686 |
|
- | Standard | 1200V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 150°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 200V 3A SMC |
7,380 |
|
- | Standard | 200V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 175°C |
|
|
Infineon Technologies |
DIODE GEN PURP 600V 29.2A TO220 |
4,356 |
|
- | Standard | 600V | 29.2A (DC) | 2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 87ns | 50µA @ 600V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 10A D2PAK |
7,398 |
|
- | Standard | 200V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 10A D2PAK |
7,398 |
|
- | Standard | 400V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 400V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 10A D2PAK |
3,006 |
|
- | Standard | 400V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 480V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | - |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 10A D2PAK |
8,136 |
|
- | Standard | 600V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 10A D2PAK |
5,778 |
|
- | Standard | 1000V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | 100µA @ 1000V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 10A D2PAK |
3,598 |
|
- | Standard | 1000V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | 100µA @ 1000V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A D2PAK |
5,256 |
|
- | Standard | 1200V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A DO219AB |
4,284 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 2A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 3µA @ 600V | - | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
|
|
Infineon Technologies |
DIODE GEN PURP 600V 29.2A TO263 |
8,028 |
|
- | Standard | 600V | 29.2A (DC) | 2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 87ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | -40°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 800V 3A DO214AB |
2,100 |
|
- | Standard | 800V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 800V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
5,886 |
|
FRED Pt® | Standard | 600V | 30A | 2.65V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 30µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 10A TO263AB |
7,452 |
|
Automotive, AEC-Q101 | Schottky | 60V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -65°C ~ 150°C |
|
|
ON Semiconductor |
DIODE GEN PURP 1KV 15A TO220AC |
4,716 |
|
Automotive, AEC-Q101 | Standard | 1000V | 15A | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 260ns | 100µA @ 1000V | - | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
Infineon Technologies |
SIC DIODES |
5,202 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 13A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 14µA @ 420V | 205pF @ 1V, 1MHz | Surface Mount | 10-PowerSOP Module | PG-HDSOP-10-1 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 25A TO263AB |
3,762 |
|
- | Standard | 1000V | 25A | 1.14V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 1000V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 50V 200MA DO35 |
4,140 |
|
- | Standard | 50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
Diodes Incorporated |
DIODE SCHOTTKY 200V 4A POWERDI5 |
5,238 |
|
- | Schottky | 200V | 4A | 840mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 175°C |
|
|
IXYS |
DIODE GEN PURP 200V 10A TO220FP |
7,776 |
|
HiPerFRED²™ | Standard | 200V | 10A | 1.27V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1µA @ 200V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | -55°C ~ 175°C |
|
|
IXYS |
DIODE SCHOTTKY 15V 20A TO220AC |
7,128 |
|
- | Schottky | 15V | 20A | 480mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 15V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
Microsemi |
DIODE SCHOTTKY 20V 3A DO215AB |
5,166 |
|
- | Schottky | 20V | 3A | 460mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 20V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 150°C |
|
|
Microsemi |
DIODE SCHOTTKY 30V 3A DO215AB |
8,478 |
|
- | Schottky | 30V | 3A | 480mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 30V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 150°C |