HSM825GE3/TR13
For Reference Only
| Part Number | HSM825GE3/TR13 |
| PNEDA Part # | HSM825GE3-TR13 |
| Description | DIODE SCHOTTKY 25V 8A DO215AB |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 3,870 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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HSM825GE3/TR13 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | HSM825GE3/TR13 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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HSM825GE3/TR13 Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 25V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 620mV @ 8A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 250µA @ 25V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | DO-215AB, SMC Gull Wing |
| Supplier Device Package | DO-215AB |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 80V Current - Average Rectified (Io) 100mA Voltage - Forward (Vf) (Max) @ If 1.2V @ 100mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) 4ns Current - Reverse Leakage @ Vr 500nA @ 80V Capacitance @ Vr, F 3pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case SC-79, SOD-523 Supplier Device Package ESC Operating Temperature - Junction 125°C (Max) |
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