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VS-10ETF10STRR-M3

VS-10ETF10STRR-M3

For Reference Only

Part Number VS-10ETF10STRR-M3
PNEDA Part # VS-10ETF10STRR-M3
Description DIODE GEN PURP 1KV 10A D2PAK
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 3,598
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-10ETF10STRR-M3 Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-10ETF10STRR-M3
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
VS-10ETF10STRR-M3, VS-10ETF10STRR-M3 Datasheet (Total Pages: 12, Size: 315.08 KB)
PDFVS-10ETF12STRR-M3 Datasheet Cover
VS-10ETF12STRR-M3 Datasheet Page 2 VS-10ETF12STRR-M3 Datasheet Page 3 VS-10ETF12STRR-M3 Datasheet Page 4 VS-10ETF12STRR-M3 Datasheet Page 5 VS-10ETF12STRR-M3 Datasheet Page 6 VS-10ETF12STRR-M3 Datasheet Page 7 VS-10ETF12STRR-M3 Datasheet Page 8 VS-10ETF12STRR-M3 Datasheet Page 9 VS-10ETF12STRR-M3 Datasheet Page 10 VS-10ETF12STRR-M3 Datasheet Page 11

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VS-10ETF10STRR-M3 Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)1000V
Current - Average Rectified (Io)10A
Voltage - Forward (Vf) (Max) @ If1.33V @ 10A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)310ns
Current - Reverse Leakage @ Vr100µA @ 1000V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK
Operating Temperature - Junction-40°C ~ 150°C

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