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VS-25ETS10S-M3

VS-25ETS10S-M3

For Reference Only

Part Number VS-25ETS10S-M3
PNEDA Part # VS-25ETS10S-M3
Description DIODE GEN PURP 1KV 25A TO263AB
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 3,762
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-25ETS10S-M3 Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-25ETS10S-M3
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
VS-25ETS10S-M3, VS-25ETS10S-M3 Datasheet (Total Pages: 11, Size: 235.92 KB)
PDFVS-25ETS12STRR-M3 Datasheet Cover
VS-25ETS12STRR-M3 Datasheet Page 2 VS-25ETS12STRR-M3 Datasheet Page 3 VS-25ETS12STRR-M3 Datasheet Page 4 VS-25ETS12STRR-M3 Datasheet Page 5 VS-25ETS12STRR-M3 Datasheet Page 6 VS-25ETS12STRR-M3 Datasheet Page 7 VS-25ETS12STRR-M3 Datasheet Page 8 VS-25ETS12STRR-M3 Datasheet Page 9 VS-25ETS12STRR-M3 Datasheet Page 10 VS-25ETS12STRR-M3 Datasheet Page 11

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VS-25ETS10S-M3 Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)1000V
Current - Average Rectified (Io)25A
Voltage - Forward (Vf) (Max) @ If1.14V @ 25A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr100µA @ 1000V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263 (D2Pak)
Operating Temperature - Junction-40°C ~ 150°C

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