Rectifiers - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 287/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE GEN PURP 200V 500A LP4 |
6,060 |
|
- | Standard | 200V | 500A | 1.1V @ 500A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 2.5mA @ 200V | - | Chassis Mount | LP4 | LP4 | - |
|
|
|
Microsemi |
DIODE GEN PURP 600V 200A HALFPAK |
4,608 |
|
- | Standard | 600V | 200A | 1.35V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 130ns | 50µA @ 600V | - | Chassis Mount | HALF-PAK | HALF-PAK | - |
|
|
|
Microsemi |
DIODE GEN PURP 3KV 570MA S AXIAL |
5,238 |
|
- | Standard | 3000V | 570mA | 6V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 1µA @ 3000V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A D5A |
5,958 |
|
Military, MIL-PRF-19500/427 | Standard | 400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500µA @ 400V | 35pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
1,694 |
|
Military, MIL-PRF-19500/429 | Standard | 200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GP 600V 1A 1=20PCS |
5,040 |
|
- | Standard | 600V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Surface Mount | Die | Die | -65°C ~ 150°C |
|
|
|
Central Semiconductor Corp |
DIODE GP 600V 1A 1=20PCS |
7,668 |
|
- | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | - | Surface Mount | Die | Die | -65°C ~ 150°C |
|
|
|
Central Semiconductor Corp |
DIODE GP 600V 1A 1=20PCS |
7,290 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 600V | - | Surface Mount | Die | Die | -65°C ~ 150°C |
|
|
|
Central Semiconductor Corp |
DIODE GP 100V 200MA DIE 1=20 |
4,950 |
|
- | Standard | 100V | 200mA (DC) | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Surface Mount | Die | Die | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 40V 3A AXIAL |
5,454 |
|
Military, MIL-PRF-19500/620 | Schottky | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Through Hole | B, Axial | - | -65°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 3A AXIAL |
6,246 |
|
Military, MIL-PRF-19500/411 | Standard | 400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | 165pF @ 4V | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 45V 1A DO41 |
4,968 |
|
Military, MIL-PRF-19500/586 | Schottky | 45V | 1A | 490mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 45V | 70pF @ 5V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 125°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 650V 750MA TO257 |
5,022 |
|
- | Silicon Carbide Schottky | 650V | 750mA | 1.39V @ 750mA | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 76pF @ 1V, 1MHz | Through Hole | TO-257-3 | TO-257 | -55°C ~ 250°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 650V 2.5A TO257 |
4,320 |
|
- | Silicon Carbide Schottky | 650V | 2.5A | 1.3V @ 2.5A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 274pF @ 1V, 1MHz | Through Hole | TO-257-3 | TO-257 | -55°C ~ 250°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 750MA TO257 |
8,658 |
|
- | Silicon Carbide Schottky | 1200V | 750mA | 1.74V @ 750mA | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1200V | 66pF @ 1V, 1MHz | Through Hole | TO-257-3 | TO-257 | -55°C ~ 250°C |
|
|
|
Microsemi |
DIODE SCHOTTKY DO-213AA |
6,768 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 300A DO205 |
4,554 |
|
Military, MIL-PRF-19500/211 | Standard | 1000V | 300A | 1.55V @ 940A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 1000V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -65°C ~ 200°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 45V 750MA SC79-2 |
8,298 |
|
- | Schottky | 45V | 750mA (DC) | 600mV @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 45V | 10pF @ 10V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | 150°C (Max) |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 3A DO201AD |
5,544 |
|
- | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | 75pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 50A TO263-3 |
2,898 |
|
- | Standard | 1200V | 50A (DC) | 2.15V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 243ns | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 30V 30MA SOD523 |
3,600 |
|
- | Schottky | 30V | 30mA | 370mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | - | 500nA @ 30V | 2pF @ 1V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | -40°C ~ 125°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 30V 30MA SOD323 |
2,826 |
|
- | Schottky | 30V | 30mA (DC) | 370mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | - | 500nA @ 30V | 2.5pF @ 1V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 80V 500MA SOD123 |
8,838 |
|
- | Schottky | 80V | 500mA | 800mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 80V | 15pF @ 5V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -55°C ~ 175°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 800MA USC |
2,502 |
|
- | Schottky | 30V | 800mA | 220mV @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | 170pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 125°C (Max) |
|
|
|
Comchip Technology |
DIODE SCHOTTKY 40V 1A MINISMA |
3,006 |
|
- | Schottky | 40V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 120pF @ 4V, 1MHz | Surface Mount | SOD-123T | Mini SMA/SOD-123 | -50°C ~ 125°C |
|
|
|
DIODE SCHOTTKY 20V 1A 0805 |
2,628 |
|
- | Schottky | 20V | 1A (DC) | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | - | Surface Mount | 0805 (2012 Metric) | 0805 (2012 Metric) | -55°C ~ 125°C |
||
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 4KV 250MA DO204 |
2,358 |
|
SUPERECTIFIER® | Standard | 4000V | 250mA | 3V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 4000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Nexperia |
DIODE SCHOTTKY 40V 1A SOD323 |
2,034 |
|
- | Schottky | 40V | 1A (DC) | 640mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 50pF @ 1V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | 150°C (Max) |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 100V 3A SOD123FA |
2,088 |
|
Automotive, AEC-Q101 | Schottky | 100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | 78pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD-123FA | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 1KV 6A R6 |
8,082 |
|
- | Standard | 1000V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Through Hole | R6, Axial | R-6 | -65°C ~ 175°C |