1N8032-GA
For Reference Only
| Part Number | 1N8032-GA |
| PNEDA Part # | 1N8032-GA |
| Description | DIODE SCHOTTKY 650V 2.5A TO257 |
| Manufacturer | GeneSiC Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,320 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 4 - Feb 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N8032-GA Resources
| Brand | GeneSiC Semiconductor |
| ECAD Module |
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| Mfr. Part Number | 1N8032-GA |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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1N8032-GA Specifications
| Manufacturer | GeneSiC Semiconductor |
| Series | - |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Current - Average Rectified (Io) | 2.5A |
| Voltage - Forward (Vf) (Max) @ If | 1.3V @ 2.5A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 5µA @ 650V |
| Capacitance @ Vr, F | 274pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-257-3 |
| Supplier Device Package | TO-257 |
| Operating Temperature - Junction | -55°C ~ 250°C |
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Manufacturer Central Semiconductor Corp Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 1.2V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 150ns Current - Reverse Leakage @ Vr 5µA @ 200V Capacitance @ Vr, F 65pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-201AD, Axial Supplier Device Package DO-201AD Operating Temperature - Junction -55°C ~ 125°C |
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