Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 284/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXYS |
DIODE GEN PURP 800V 30A TO263 |
6,966 |
|
- | Standard | 800V | 30A | 1.29V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 800V | 10pF @ 400V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | -40°C ~ 175°C |
|
|
|
Rohm Semiconductor |
RBQ30NS45BFH IS THE HIGH RELIABI |
8,478 |
|
Automotive, AEC-Q101 | Schottky | 45V | 30A | 590mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350µA @ 45V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPDS | 150°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 120V 30A I2PAK |
15,000 |
|
- | Schottky | 120V | 30A | 950mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 275µA @ 120V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 150°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 120V 30A TO220AB |
8,820 |
|
- | Schottky | 120V | 30A | 950mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 275µA @ 120V | - | Through Hole | TO-220-3 | TO-220AB Narrow Leads | 150°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 30A TO-3PF |
14,796 |
|
- | Standard | 600V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 10µA @ 600V | - | Through Hole | TO-3P-3 Full Pack | TO-3PF | 175°C (Max) |
|
|
|
STMicroelectronics |
AUTOMOTIVE-GRADE ULTRAFAST DIODE |
7,866 |
|
Automotive, AEC-Q101, ECOPACK®2 | Standard | 600V | 30A | 2.95V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 40µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK HV | -40°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODES - D2PAK-E3 |
3,508 |
|
Automotive, AEC-Q101 | Standard | 600V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODES - D2PAK-E3 |
8,064 |
|
Automotive, AEC-Q101 | Standard | 1200V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 16A D2PAK |
14,988 |
|
- | Schottky | 35V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 35V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODES SILICON CARBIDE |
5,922 |
|
- | Silicon Carbide Schottky | 650V | 2.15A (DC) | 1.5V @ 2.15A | No Recovery Time > 500mA (Io) | 0ns | 10.8µA @ 650V | 110pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTL | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 30V 30A POWERFLAT |
1,298 |
|
- | Schottky | 30V | 30A | 510mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 750µA @ 30V | - | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 150°C (Max) |
|
|
|
STMicroelectronics |
BRIDGE RECTIFIER DIODES |
7,470 |
|
ECOPACK®2 | Standard | 1200V | 30A | 1.3V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 2µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK HV | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 100V 30A I2PAK |
6,456 |
|
- | Schottky | 100V | 30A | 870mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 45µA @ 100V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 150°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 10A TO263AB |
7,596 |
|
- | Standard | 800V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 500µA @ 800V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 6A TO220AC |
8,766 |
|
- | Schottky | 35V | 6A | 600mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 35V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
|
Littelfuse |
DIODE SIC SCHOTTKY 650V 8A TO220 |
6,901 |
|
- | Silicon Carbide Schottky | 650V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 230µA @ 650V | 260pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 45V 30A POWERFLAT |
3,636 |
|
- | Schottky | 45V | 30A | 640mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 45V | - | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 150°C (Max) |
|
|
|
Infineon Technologies |
DIODE GEN PURP 650V 30A TO247-3 |
9,312 |
|
- | Standard | 650V | 30A | 2.3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 47ns | 40µA @ 650V | - | Through Hole | TO-247-3 | PG-TO247-3 | -40°C ~ 175°C |
|
|
|
STMicroelectronics |
AUTOMOTIVE-GRADE BRIDGE RECTIFIE |
7,074 |
|
Automotive, AEC-Q101, ECOPACK®2 | Standard | 1200V | 30A | 1.3V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 2µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK HV | -40°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 200V 12A TO220AC |
7,980 |
|
- | Standard | 200V | 12A | 1.1V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 100V 30A I2PAK |
16,308 |
|
- | Schottky | 100V | 30A | 800mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 175µA @ 100V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 150°C (Max) |
|
|
|
STMicroelectronics |
SILICON CARBIDE DIODES |
8,514 |
|
ECOPACK®2 | Silicon Carbide Schottky | 650V | 6A | 1.55V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 350pF @ 0V, 1MHz | Surface Mount | 8-PowerVDFN | PowerFlat™ (8x8) HV | -40°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODES - D2PAK-E3 |
7,038 |
|
Automotive, AEC-Q101 | Standard | 1200V | 25A | 1.14V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 100V 20A TO220FP |
16,548 |
|
- | Schottky | 100V | 20A | 850mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 40µA @ 100V | - | Through Hole | TO-220-3 Full Pack | TO-220FPAB | 150°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 100V 20A I2PAK |
7,212 |
|
- | Schottky | 100V | 20A | 850mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 40µA @ 100V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 150°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 30A D2PAK |
4,608 |
|
Automotive, AEC-Q101, ECOPACK®2 | Standard | 600V | 30A | 3.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
|
|
|
STMicroelectronics |
AUTOMOTIVE 650 V POWER SCHOTTKY |
7,146 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 6A | - | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 300pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -40°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE SILICON 1.2KV 1A TO252 |
5,418 |
|
- | Silicon Carbide Schottky | 1200V | 1A | 1.8V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 2µA @ 1200V | 69pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 20A DO247 |
12,684 |
|
- | Standard | 600V | 20A | 1.75V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 25µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A TO220FP |
8,904 |
|
- | Standard | 1200V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | - | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |