Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 285/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE SCHOTTKY 45V 3A DO214AB |
3,582 |
|
- | Schottky | 45V | 3A | 520mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 45V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 600V 6A D2PAK |
5,562 |
|
- | Silicon Carbide Schottky | 600V | 6A | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 75µA @ 600V | 375pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 6A D2PAK |
6,138 |
|
- | Schottky | 45V | 6A | 600mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 45V | 400pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 12A TO220AC |
6,360 |
|
- | Standard | 600V | 12A | 2.95V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 20µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | -40°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODES SILICON CARBIDE |
2,556 |
|
- | Silicon Carbide Schottky | 650V | 4A (DC) | 1.5V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 650V | 200pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTL | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 60V 30A I2PAK |
19,512 |
|
- | Schottky | 60V | 30A | 590mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 165µA @ 60V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 150°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 650V 8A D2PAK |
6,840 |
|
- | Silicon Carbide Schottky | 650V | 8A | 1.75V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 650V | 414pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 650V 80A TO247-3 |
7,272 |
|
- | Standard | 650V | 80A | 1.7V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 129ns | 40µA @ 650V | - | Through Hole | TO-247-3 | TO-247-3 | -40°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODES SILICON CARBIDE |
5,166 |
|
- | Silicon Carbide Schottky | 650V | 6A (DC) | 1.5V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 650V | 300pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTL | 175°C (Max) |
|
|
|
STMicroelectronics |
AUTOMOTIVE 650 V POWER SCHOTTKY |
2,632 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 8A | - | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 650V | 414pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -40°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 85V 200MA DO35 |
11,100 |
|
- | Standard | 85V | 200mA | 1.1V @ 400mA | Small Signal =< 200mA (Io), Any Speed | 10ns | 100µA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 200°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A TO220AC |
6,912 |
|
- | Standard | 1200V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 2A TO220AC |
8,586 |
|
- | Silicon Carbide Schottky | 1200V | 2A | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 138pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 650V 12A TO220AC |
8,874 |
|
- | Schottky | 650V | 12A | 1.75V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 650V | 600pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODES SILICON CARBIDE |
8,406 |
|
- | Silicon Carbide Schottky | 650V | 10A (DC) | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 500pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTL | 175°C (Max) |
|
|
|
Microsemi |
DIODE GEN PURP 85V 200MA DO35 |
6,228 |
|
- | Standard | 85V | 200mA | 1.1V @ 400mA | Small Signal =< 200mA (Io), Any Speed | 10ns | 100µA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 200V 30A DOP3I |
7,212 |
|
- | Standard | 200V | 30A | 1.05V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 20µA @ 200V | - | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | 175°C (Max) |
|
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|
Littelfuse |
DIODE SCHOTTKY SIC 650V 10A |
2,988 |
|
Automotive, AEC-Q101, GEN2 | Silicon Carbide Schottky | 650V | 27A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 470pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 6A TO220AC |
147 |
|
HEXFRED® | Standard | 1200V | 6A | 3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 5µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
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|
Microsemi |
DIODE GEN PURP 50V 200MA DO35 |
5,544 |
|
Military, MIL-PRF-19500/231 | Standard | 50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
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|
Central Semiconductor Corp |
DIODE SCHOTTKY 1.2KV 5A DPAK |
4,806 |
|
- | Silicon Carbide Schottky | 1200V | 5A | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 1200V | 240pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 175°C |
|
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|
Littelfuse |
DIODE SC SCHOTKY 1200V 10A TO220 |
4,140 |
|
- | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 1200V | 500pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 12A DO4 |
6,732 |
|
- | Standard, Reverse Polarity | 600V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 1KV 12A DO4 |
4,374 |
|
- | Standard, Reverse Polarity | 1000V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |
|
|
|
Littelfuse |
DIODE SCHOTTKY SIC 650V 16A |
8,820 |
|
Automotive, AEC-Q101, GEN2 | Silicon Carbide Schottky | 650V | 38A (DC) | 1.8V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 730pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -55°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 50V 12A DO4 |
7,002 |
|
- | Standard | 50V | 12A | 1.4V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
|
|
|
Microsemi |
UFR,FRR |
3,600 |
|
- | Standard | 150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 1A |
8,820 |
|
Military, MIL-PRF-19500/228 | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 200MA DO213AA |
6,576 |
|
Military, MIL-PRF-19500/116 | Standard | 75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 1.2KV 20A D2PAK |
3,731 |
|
Automotive, AEC-Q101, ECOPACK®2 | Silicon Carbide Schottky | 1200V | 20A | 1.5V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 1200V | 1650pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | -40°C ~ 175°C |