GB01SLT12-252
For Reference Only
| Part Number | GB01SLT12-252 |
| PNEDA Part # | GB01SLT12-252 |
| Description | DIODE SILICON 1.2KV 1A TO252 |
| Manufacturer | GeneSiC Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 5,418 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Dec 20 - Dec 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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GB01SLT12-252 Resources
| Brand | GeneSiC Semiconductor |
| ECAD Module |
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| Mfr. Part Number | GB01SLT12-252 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
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GB01SLT12-252 Specifications
| Manufacturer | GeneSiC Semiconductor |
| Series | - |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.8V @ 1A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 2µA @ 1200V |
| Capacitance @ Vr, F | 69pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252 |
| Operating Temperature - Junction | -55°C ~ 175°C |
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