Rectifiers - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 161/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Littelfuse |
DIODE SIC SCHOTTKY 1200V 8A |
24,702 |
|
Gen2 | Silicon Carbide Schottky | 1200V | 24.5A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 454pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -55°C ~ 175°C |
|
|
STMicroelectronics |
DIODE SCHOTTKY 650V 8A TO220AC |
17,112 |
|
Automotive, AEC-Q101, ECOPACK®2 | Silicon Carbide Schottky | 650V | 8A | 1.45V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 105µA @ 650V | 540pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
|
|
ON Semiconductor |
DIODE GEN PURP 600V 50A TO247-2 |
24,228 |
|
Automotive, AEC-Q101 | Standard | 600V | 50A | 1.6V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
STMicroelectronics |
DIODE GEN PURP 400V 30A DO247 |
8,496 |
|
- | Standard | 400V | 30A | 1.45V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 15µA @ 400V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
|
|
ON Semiconductor |
DIODE GEN PURP 600V 30A TO247-2 |
8,916 |
|
Automotive, AEC-Q101 | Standard | 600V | 30A | 1.5V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
Rohm Semiconductor |
DIODES SILICON CARBIDE |
14,808 |
|
- | Silicon Carbide Schottky | 650V | 15A (DC) | 1.5V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 75µA @ 650V | 750pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTL | 175°C (Max) |
|
|
ON Semiconductor |
SIC DIODE 650V |
16,332 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 20A | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 866pF @ 1V, 100kHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK-3 (TO-263-3) | -55°C ~ 175°C |
|
|
Littelfuse |
SIC SCHOTTKY DIODE 650V 6A TO220 |
23,904 |
|
Gen2 | Silicon Carbide Schottky | 650V | 18.5A (DC) | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
|
|
Comchip Technology |
DIODE SILICON CARBIDE POWER SCHO |
7,524 |
|
- | Silicon Carbide Schottky | 650V | 25.5A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 550pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | -55°C ~ 175°C |
|
|
SMC Diode Solutions |
DIODE SCHOTTKY SILICON CARBIDE S |
6,204 |
|
- | Silicon Carbide Schottky | 650V | 5A | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 175°C |
|
|
SMC Diode Solutions |
DIODE SCHOTTKY SILICON CARBIDE S |
7,680 |
|
- | Silicon Carbide Schottky | 650V | 5A | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
ON Semiconductor |
DIODE SCHOTTKY 650V 13A TO220-2 |
16,176 |
|
- | Silicon Carbide Schottky | 650V | 13A (DC) | 1.75V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 463pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
STMicroelectronics |
DIODE SCHOTTKY 650V 10A TO220AC |
1,710 |
|
ECOPACK®2 | Silicon Carbide Schottky | 650V | 10A | 1.45V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 130µA @ 650V | 670pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
|
|
SMC Diode Solutions |
DIODE SCHOTTKY SILICON CARBIDE S |
8,478 |
|
- | Silicon Carbide Schottky | 650V | 6A | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 150pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
SMC Diode Solutions |
DIODE SCHOTTKY SILICON CARBIDE S |
7,992 |
|
- | Silicon Carbide Schottky | 650V | 6A | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 150pF @ 5V, 1MHz | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 175°C |
|
|
ON Semiconductor |
650V 10A SIC SBD GEN1.5 |
8,448 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 11.5A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 421pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
Semtech |
DIODE GEN PURP 800V 1A AXIAL |
14,592 |
|
- | Avalanche | 800V | 2A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 800V | 23pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
|
|
STMicroelectronics |
AUTOMOTIVE TURBO 2 ULTRAFAST HIG |
14,736 |
|
Automotive, AEC-Q101 | Standard | 600V | 60A | - | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 80µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
|
|
Littelfuse |
SIC SCHOTTKY DIOD 650V 16A TO252 |
25,122 |
|
Gen2 | Silicon Carbide Schottky | 650V | 38A (DC) | 1.8V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 730pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -55°C ~ 175°C |
|
|
STMicroelectronics |
DIODE GEN PURP 400V 30A TO220AC |
19,428 |
|
Automotive, AEC-Q101 | Standard | 400V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 15µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
|
|
Littelfuse |
DIODE SCHOTTKY 1.2KV 17.5A TO220 |
17,172 |
|
Gen2 | Silicon Carbide Schottky | 1200V | 17.5A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 310pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
NEW INPUT DIODES - TO-247-E3 |
8,220 |
|
- | Standard | 1200V | 90A | 1.2V @ 90A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
NEW INPUT DIODES - TO-247-E3 |
8,052 |
|
- | Standard | 1200V | 90A | 1.2V @ 90A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AD | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE FREDS 1200V 60A TO-247 |
11,004 |
|
FRED Pt® | Standard | 1200V | 60A | 2.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 130ns | 50µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
|
|
GeneSiC Semiconductor |
SIC DIODE 1200V 2A TO-220-2 |
14,394 |
|
- | Silicon Carbide Schottky | 1200V | 12A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 2µA @ 1200V | 127pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODES - TO-247-E3 |
11,472 |
|
Automotive, AEC-Q101 | Standard | 600V | 35A | 1.46V @ 35A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODES - TO-247-E3 |
10,092 |
|
Automotive, AEC-Q101 | Standard | 1200V | 35A | 1.47V @ 35A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODES - TO-247-E3 |
9,384 |
|
Automotive, AEC-Q101 | Standard | 600V | 35A | 1.46V @ 35A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Through Hole | TO-3P-3, SC-65-3 (Formed Leads) | TO-247AD | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODES - TO-247-E3 |
7,620 |
|
Automotive, AEC-Q101 | Standard | 1200V | 35A | 1.47V @ 35A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1200V | - | Through Hole | TO-3P-3, SC-65-3 (Formed Leads) | TO-247AD | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE FREDS 1200V 60A TO-247 |
7,608 |
|
FRED Pt® | Standard | 1200V | 60A | 3.15V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 50µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |