1N5620C.TR
For Reference Only
| Part Number | 1N5620C.TR |
| PNEDA Part # | 1N5620C-TR |
| Description | DIODE GEN PURP 800V 1A AXIAL |
| Manufacturer | Semtech |
| Unit Price | Request a Quote |
| In Stock | 14,592 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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1N5620C.TR Resources
| Brand | Semtech |
| ECAD Module |
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| Mfr. Part Number | 1N5620C.TR |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
Payment Method
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- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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1N5620C.TR Specifications
| Manufacturer | Semtech Corporation |
| Series | - |
| Diode Type | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 800V |
| Current - Average Rectified (Io) | 2A |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 1A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2µs |
| Current - Reverse Leakage @ Vr | 500nA @ 800V |
| Capacitance @ Vr, F | 23pF @ 5V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | Axial |
| Supplier Device Package | Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
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Manufacturer IXYS Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 300V Current - Average Rectified (Io) 11A Voltage - Forward (Vf) (Max) @ If 2V @ 5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1.3mA @ 300V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package TO-252AA Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.3V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 100ns Current - Reverse Leakage @ Vr 10µA @ 400V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case SOD-128 Supplier Device Package M-FLAT (2.4x3.8) Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/477 Diode Type Standard Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 875mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 25ns Current - Reverse Leakage @ Vr 1µA @ 50V Capacitance @ Vr, F 25pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case SQ-MELF, A Supplier Device Package D-5A Operating Temperature - Junction -65°C ~ 175°C |
