Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 162/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Semtech |
DIODE GEN PURP 200V 3A AXIAL |
15,372 |
|
- | Standard | 200V | 5A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | 92pF @ 5V, 1MHz | Through Hole | Axial | Axial | - |
|
|
|
ON Semiconductor |
DIODE GEN PURP 400V 60A TO247 |
9,864 |
|
- | Standard | 400V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 100µA @ 400V | - | Through Hole | TO-247-3 | TO-247 | -65°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 650V 10A TO220AC |
10,944 |
|
Automotive, AEC-Q101, ECOPACK®2 | Silicon Carbide Schottky | 650V | 10A | 1.45V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 130µA @ 650V | 670pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
6A 650V G6 ZREC SIC SCHOTTKY DIO |
17,856 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 24A (DC) | 1.5V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 650V | 394pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODES - TO-247-E3 |
10,332 |
|
Automotive, AEC-Q101 | Standard | 1200V | 45A | 1.14V @ 45A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-3P-3, SC-65-3 (Formed Leads) | TO-247AD | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODES - TO-247-E3 |
11,568 |
|
Automotive, AEC-Q101 | Standard | 1200V | 45A | 1.14V @ 45A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
|
|
Littelfuse |
SIC SCHOTTKY DIODE 650V 8A TO220 |
22,572 |
|
Gen2 | Silicon Carbide Schottky | 650V | 23A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 415pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
|
|
|
Comchip Technology |
DIODE SILICON CARBIDE POWER SCHO |
14,100 |
|
- | Silicon Carbide Schottky | 650V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 560pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220F | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODES - TO-247-E3 |
8,856 |
|
Automotive, AEC-Q101 | Standard | 1600V | 45A | 1.16V @ 45A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1600V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 8A TO220AC |
13,458 |
|
- | Silicon Carbide Schottky | 650V | 8A (DC) | 1.55V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 600V | 291pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 650V 10A TO220AC |
20,724 |
|
Automotive, AEC-Q101, ECOPACK®2 | Schottky | 650V | 10A | 1.75V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 650V | 480pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
|
|
|
Littelfuse |
SIC SCHOTTKY DIOD 650V 20A TO252 |
25,908 |
|
Gen2 | Silicon Carbide Schottky | 650V | 45A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 960pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 650V 15A TO220-2 |
16,872 |
|
- | Silicon Carbide Schottky | 650V | 15A (DC) | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 575pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
AUTOMOTIVE 650 V POWER SCHOTTKY |
14,226 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 10A | - | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 480pF @ 0V, 1MHz | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | -40°C ~ 175°C |
|
|
|
Comchip Technology |
DIODE SILICON CARBIDE POWER SCHO |
7,488 |
|
- | Silicon Carbide Schottky | 650V | 33A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 690pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | -55°C ~ 175°C |
|
|
|
Comchip Technology |
DIODE SILICON CARBIDE POWER SCHO |
15,504 |
|
- | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 710pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220F | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 24A TO220-2 |
1,404 |
|
- | Silicon Carbide Schottky | 650V | 24A (DC) | 1.35V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 33µA @ 420V | 495pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 10A SIC SBD |
23,856 |
|
- | Silicon Carbide Schottky | 650V | 10A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 575pF @ 1V, 100kHz | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | -55°C ~ 175°C |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY SILICON CARBIDE S |
7,692 |
|
- | Silicon Carbide Schottky | 650V | 10A | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 695pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY SILICON CARBIDE S |
6,276 |
|
- | Silicon Carbide Schottky | 650V | 10A | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 695pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
1200V 10A AUTO SIC SBD |
18,960 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 21A (DC) | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 612pF @ 1V, 100kHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK-3 (TO-263) | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 650V 15A TO220-2 |
16,188 |
|
- | Silicon Carbide Schottky | 650V | 15A (DC) | 1.75V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 665pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
|
|
|
Littelfuse |
SIC SCHOTTKY DIOD 650V 10A TO220 |
15,138 |
|
Gen2 | Silicon Carbide Schottky | 650V | 27A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 470pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 700V 10A TO220-3 |
8,910 |
|
- | Silicon Carbide Schottky | 700V | 10A (DC) | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-220-3 | TO-220-3 | - |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 1.2KV 8A TO220-2 |
13,692 |
|
- | Silicon Carbide Schottky | 1200V | 8A (DC) | 1.75V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 1200V | 538pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
8A 650V G6 ZREC SIC SCHOTTKY DIO |
22,248 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 30A (DC) | 1.5V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 518pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODES - TO-247-E3 |
15,120 |
|
Automotive, AEC-Q101 | Standard | 600V | 45A | 1.31V @ 45A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODES - TO-247-E3 |
9,108 |
|
Automotive, AEC-Q101 | Standard | 1200V | 65A | 1.12V @ 65A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODES - TO-247-E3 |
9,816 |
|
Automotive, AEC-Q101 | Standard | 1200V | 65A | 1.12V @ 65A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-3P-3, SC-65-3 (Formed Leads) | TO-247AD | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODES - TO-247-E3 |
13,248 |
|
Automotive, AEC-Q101 | Standard | 1200V | 45A | 1.44V @ 45A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |