Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 159/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Rohm Semiconductor |
RFV5BM6SFH IS THE HIGH RELIABILI |
26,400 |
|
Automotive, AEC-Q101 | Standard | 600V | 5A | 2.8V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 150°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 3.5A SOD64 |
90,864 |
|
- | Avalanche | 100V | 3.5A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 100V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY 60V 5A ITO220AC |
65,082 |
|
- | Schottky | 60V | 5A | 600mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 220pF @ 5V, 1MHz | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 6.4A TO277A |
12,084 |
|
eSMP®, TMBS® | Schottky | 60V | 6.4A | 590mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 6mA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 15A 45V TO-277A |
17,496 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 45V | 4.8A (DC) | 580mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 45V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 150V 3.5A SOD64 |
97,122 |
|
- | Avalanche | 150V | 3.5A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 150V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A P600 |
23,472 |
|
- | Standard | 600V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 600V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 6A TO277A |
32,616 |
|
eSMP®, TMBS® | Schottky | 50V | 6A | 570mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 50V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 3.5A SOD64 |
26,910 |
|
- | Avalanche | 200V | 3.5A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 200V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
|
Nexperia |
DIODE SCHOTTKY 50V 15A CFP15 |
86,856 |
|
Automotive, AEC-Q101 | Schottky | 50V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 100µA @ 50V | 800pF @ 10V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | CFP15 | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 2A DO214AA |
12,090 |
|
Automotive, AEC-Q101 | Schottky | 30V | 2A | 470mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 200pF @ 5V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
|
Rohm Semiconductor |
RFV8BM6SFH IS THE HIGH RELIABILI |
18,954 |
|
Automotive, AEC-Q101 | Standard | 600V | 8A | 2.8V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 10µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 150°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 3.5A SOD64 |
49,692 |
|
- | Avalanche | 600V | 3.5A | 1.35V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 210ns | 5µA @ 600V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 15A D2PAK |
29,556 |
|
ECOPACK® | Standard | 600V | 15A | 2.95V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 20µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
1A, 600V, MICROSMP, ESD PROTECTI |
386,886 |
|
eSMP® | Standard | 600V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 650ns | 1µA @ 600V | 4pF @ 4V, 1MHz | Surface Mount | MicroSMP | MicroSMP (DO-219AD) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
1A, 400V, MICROSMP, ESD PROTECTI |
324,588 |
|
eSMP® | Standard | 400V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 650ns | 1µA @ 400V | 4pF @ 4V, 1MHz | Surface Mount | MicroSMP | MicroSMP (DO-219AD) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
1A, 400V, MICROSMP, ESD PROTECTI |
378,528 |
|
Automotive, AEC-Q101, eSMP® | Standard | 400V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 650ns | 1µA @ 400V | 4pF @ 4V, 1MHz | Surface Mount | MicroSMP | MicroSMP (DO-219AD) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
1A, 600V, MICROSMP, ESD PROTECTI |
350,316 |
|
Automotive, AEC-Q101, eSMP® | Standard | 600V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 650ns | 1µA @ 600V | 4pF @ 4V, 1MHz | Surface Mount | MicroSMP | MicroSMP (DO-219AD) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A TO263AB |
18,258 |
|
- | Schottky | 45V | 10A | 840mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 20A TO263AB |
25,536 |
|
TMBS® | Schottky | 45V | 20A (DC) | 660mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 45V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 200°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 10A TO220-2 |
28,608 |
|
- | Standard | 600V | 10A | 2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30A 80V TO-263AB |
31,026 |
|
- | Schottky | 80V | 30A | 950mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 80V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 6.5A P600 |
12,792 |
|
TMBS® | Schottky | 45V | 6.5A | 580mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.2mA @ 45V | 2050pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 4A D2PAK |
20,820 |
|
HEXFRED® | Standard | 600V | 4A (DC) | 2.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 42ns | 3µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE RECT 100V 20A TO220AB |
20,376 |
|
- | FERD (Field Effect Rectifier Diode) | 100V | 20A | 780mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | TO-220-3 | TO-220AB | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 30A D2PAK |
17,544 |
|
ECOPACK® | Standard | 600V | 30A | 2.95V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 40µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 8A TO220F |
32,046 |
|
- | Standard | 600V | 8A | 1.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 18ns | 20µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 175°C (Max) |
|
|
|
Taiwan Semiconductor Corporation |
3A 400V ESD CAPABILITY RECTIFIER |
19,368 |
|
- | Standard | 400V | 3A | - | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 400V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, HIGH EFFICIENT |
19,356 |
|
Automotive, AEC-Q101 | Standard | 1000V | 10A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 10µA @ 1000V | 40pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE, HIGH EFFICIENT |
17,880 |
|
Automotive, AEC-Q101 | Standard | 800V | 10A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 10µA @ 800V | 40pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |