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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single

Records 34,936

Page 1110/1165

Part Number	Manufacturer	Description	In Stock	Series	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MUR4L20 B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO201AD	7,326	-	Standard	200V	4A	890mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR4L20HB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO201AD	5,454	Automotive, AEC-Q101	Standard	200V	4A	890mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR4L40HB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO201AD	8,784	Automotive, AEC-Q101	Standard	400V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR4L60 B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO201AD	2,232	-	Standard	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
MUR4L60HB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO201AD	5,598	Automotive, AEC-Q101	Standard	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
SF11G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	8,208	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF11GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	2,160	Automotive, AEC-Q101	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF12GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	6,930	Automotive, AEC-Q101	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF13G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO204AL	3,528	-	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF13GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO204AL	4,626	Automotive, AEC-Q101	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF14G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	3,456	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF14GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	2,376	Automotive, AEC-Q101	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF15GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A DO204AL	5,922	Automotive, AEC-Q101	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF16G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	4,500	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF16GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	2,100	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF17G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A DO204AL	2,682	-	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF17GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A DO204AL	5,184	Automotive, AEC-Q101	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF18G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	8,262	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF18GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	4,716	Automotive, AEC-Q101	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF24G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO204AC	6,426	-	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF24GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO204AC	7,164	Automotive, AEC-Q101	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF25G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 2A DO204AC	2,682	-	Standard	300V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF25GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 2A DO204AC	3,348	Automotive, AEC-Q101	Standard	300V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF26G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO204AC	3,978	-	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF26GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO204AC	4,464	Automotive, AEC-Q101	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF27GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 2A DO204AC	3,996	Automotive, AEC-Q101	Standard	500V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF28G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO204AC	7,542	-	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF28GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO204AC	6,642	Automotive, AEC-Q101	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF2L4G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO204AC	5,274	-	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 200V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF2L4GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO204AC	7,182	Automotive, AEC-Q101	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 200V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C

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