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Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 1108/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
FR204G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO204AC
3,708
-
Standard
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
10pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR205G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO204AC
4,140
-
Standard
600V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR206G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 2A DO204AC
3,024
-
Standard
800V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
10pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR207G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 2A DO204AC
2,538
-
Standard
-
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
10pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR301G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO201AD
3,780
-
Standard
50V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR302G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
8,694
-
Standard
100V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR303G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO201AD
6,246
-
Standard
200V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR304G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO201AD
6,714
-
Standard
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR305G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
4,302
-
Standard
600V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR306G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO201AD
7,722
-
Standard
800V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR307G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO201AD
5,112
-
Standard
-
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
HER101G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
2,124
-
Standard
50V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
HER102G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
2,394
-
Standard
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
HER103G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
2,466
-
Standard
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
HER104G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A DO204AL
8,784
-
Standard
300V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
HER105G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
7,794
-
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
HER106G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
4,158
-
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
HER107G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO204AL
3,762
-
Standard
800V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
HER108G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
8,352
-
Standard
-
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
HER151G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1.5A DO204AC
4,842
-
Standard
50V
1.5A
1V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER152G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1.5A DO204AC
6,930
-
Standard
100V
1.5A
1V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER153G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A DO204AC
6,876
-
Standard
200V
1.5A
1V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER154G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1.5A DO204AC
2,196
-
Standard
300V
1.5A
1V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER155G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1.5A DO204AC
4,572
-
Standard
400V
1.5A
1V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER156G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.5A DO204AC
3,798
-
Standard
600V
1.5A
1V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER157G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1.5A DO204AC
8,154
-
Standard
800V
1.5A
1V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER158G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1.5A DO204AC
2,988
-
Standard
-
1.5A
1V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER201G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO204AC
3,580
-
Standard
50V
2A
1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER202G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO204AC
8,460
-
Standard
100V
2A
1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER203G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO204AC
7,758
-
Standard
200V
2A
1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C