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Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 1111/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SF2L6G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO204AC
5,220
-
Standard
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 400V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SF2L6GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO204AC
6,894
Automotive, AEC-Q101
Standard
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 400V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SF2L8G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO204AC
2,556
-
Standard
600V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 600V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SF2L8GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO204AC
6,192
Automotive, AEC-Q101
Standard
600V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 600V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SF31G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO201AD
2,358
-
Standard
50V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF31GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO201AD
3,438
Automotive, AEC-Q101
Standard
50V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF32G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
8,928
-
Standard
100V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF32GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
7,452
Automotive, AEC-Q101
Standard
100V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF33G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO201AD
3,330
-
Standard
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF33GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO201AD
7,848
Automotive, AEC-Q101
Standard
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF34G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO201AD
3,672
-
Standard
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF34GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO201AD
5,760
Automotive, AEC-Q101
Standard
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF35G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO201AD
6,714
-
Standard
300V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF35GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO201AD
6,336
Automotive, AEC-Q101
Standard
300V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF36GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO201AD
2,880
Automotive, AEC-Q101
Standard
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF37G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 3A DO201AD
6,066
-
Standard
500V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF37GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 3A DO201AD
3,168
Automotive, AEC-Q101
Standard
500V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF38GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
7,542
Automotive, AEC-Q101
Standard
600V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF41G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 4A DO201AD
5,292
-
Standard
50V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF41GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 4A DO201AD
3,762
Automotive, AEC-Q101
Standard
50V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF42G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 4A DO201AD
4,770
-
Standard
100V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF42GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 4A DO201AD
8,730
Automotive, AEC-Q101
Standard
100V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF43G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 4A DO201AD
7,884
-
Standard
150V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF43GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 4A DO201AD
7,146
Automotive, AEC-Q101
Standard
150V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF44G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
7,632
-
Standard
200V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF44GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
7,452
Automotive, AEC-Q101
Standard
200V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF45G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 4A DO201AD
6,966
-
Standard
300V
4A
1.3V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF45GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 4A DO201AD
4,878
Automotive, AEC-Q101
Standard
300V
4A
1.3V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF46G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 4A DO201AD
3,508
-
Standard
400V
4A
1.3V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF46GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 4A DO201AD
7,092
Automotive, AEC-Q101
Standard
400V
4A
1.3V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C