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Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 1107/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
6A10GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 6A R-6
5,472
Automotive, AEC-Q101
Standard
100V
6A
1.1V @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
60pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
6A20GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 6A R-6
6,264
Automotive, AEC-Q101
Standard
200V
6A
1V @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 200V
60pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
6A40G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 6A R-6
2,394
-
Standard
400V
6A
1V @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
60pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
6A60GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 6A R-6
6,390
Automotive, AEC-Q101
Standard
600V
6A
1V @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 600V
60pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
6A80G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 6A R-6
3,276
-
Standard
800V
6A
1V @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
60pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
6A80GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 6A R-6
4,896
Automotive, AEC-Q101
Standard
800V
6A
1V @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
60pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
FR101G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
6,336
-
Standard
50V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
FR102G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
6,552
-
Standard
100V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
FR103G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
6,138
-
Standard
200V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
FR104G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
2,502
-
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
FR105G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
2,862
-
Standard
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
FR106G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO204AL
7,884
-
Standard
800V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
FR107G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
5,904
-
Standard
-
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
FR151G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1.5A DO204AC
6,048
-
Standard
50V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR151GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1.5A DO204AC
2,664
Automotive, AEC-Q101
Standard
50V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR152G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1.5A DO204AC
5,634
-
Standard
100V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR152GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1.5A DO204AC
4,446
Automotive, AEC-Q101
Standard
100V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR153G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A DO204AC
4,734
-
Standard
200V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR153GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A DO204AC
5,274
Automotive, AEC-Q101
Standard
200V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR154G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1.5A DO204AC
5,148
-
Standard
400V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR154GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1.5A DO204AC
5,184
Automotive, AEC-Q101
Standard
400V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR155G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.5A DO204AC
3,544
-
Standard
600V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR155GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.5A DO204AC
4,212
Automotive, AEC-Q101
Standard
600V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR156G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1.5A DO204AC
2,772
-
Standard
800V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR156GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1.5A DO204AC
4,662
Automotive, AEC-Q101
Standard
800V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR157G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1.5A DO204AC
6,408
-
Standard
-
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR157GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1.5A DO204AC
3,474
Automotive, AEC-Q101
Standard
-
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR201G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO204AC
4,482
-
Standard
50V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
10pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR202G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO204AC
8,226
-
Standard
100V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
10pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
FR203G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO204AC
6,156
-
Standard
200V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
10pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C