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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single

Records 34,936

Page 1104/1165

Part Number	Manufacturer	Description	In Stock	Series	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
UG5JHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A TO220AC	6,624	Automotive, AEC-Q101	Standard	600V	5A	3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	30µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
UG8JHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A TO220AC	4,608	Automotive, AEC-Q101	Standard	600V	8A	2.9V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	30µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
UGF12J C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 12A ITO220AC	8,208	-	Standard	600V	12A	2V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 600V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
UGF5JHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A ITO220AC	5,148	Automotive, AEC-Q101	Standard	600V	5A	3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	30µA @ 600V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
UGF8JDHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A ITO220AC	4,626	Automotive, AEC-Q101	Standard	600V	8A	2.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 600V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
1N4001G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	7,578	-	Standard	50V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4001GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	7,614	Automotive, AEC-Q101	Standard	50V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4002G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	6,462	-	Standard	100V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4002GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	4,644	Automotive, AEC-Q101	Standard	100V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4003G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	4,140	-	Standard	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4003GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	8,298	Automotive, AEC-Q101	Standard	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4004G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	3,060	-	Standard	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4004GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	8,658	Automotive, AEC-Q101	Standard	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4005GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	3,114	Automotive, AEC-Q101	Standard	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4006G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	4,698	-	Standard	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4006GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	3,240	Automotive, AEC-Q101	Standard	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4007G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	8,442	-	Standard	1000V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4007GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	6,354	Automotive, AEC-Q101	Standard	1000V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4933G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	2,466	-	Standard	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4933GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	5,760	Automotive, AEC-Q101	Standard	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4934G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	6,966	-	Standard	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4934GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	7,380	Automotive, AEC-Q101	Standard	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4935G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	5,706	-	Standard	200V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4935GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	2,988	Automotive, AEC-Q101	Standard	200V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4936G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	2,100	-	Standard	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4936GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	2,106	Automotive, AEC-Q101	Standard	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4937G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	8,514	-	Standard	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4937GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	8,856	Automotive, AEC-Q101	Standard	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N5391G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1.5A DO204AC	3,924	-	Standard	50V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5391GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1.5A DO204AC	3,222	Automotive, AEC-Q101	Standard	50V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C

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