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SIA918EDJ-T1-GE3

SIA918EDJ-T1-GE3

For Reference Only

Part Number SIA918EDJ-T1-GE3
PNEDA Part # SIA918EDJ-T1-GE3
Description MOSFET 2N-CH 30V POWERPAK SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,904
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA918EDJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA918EDJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIA918EDJ-T1-GE3, SIA918EDJ-T1-GE3 Datasheet (Total Pages: 9, Size: 380.79 KB)
PDFSIA918EDJ-T1-GE3 Datasheet Cover
SIA918EDJ-T1-GE3 Datasheet Page 2 SIA918EDJ-T1-GE3 Datasheet Page 3 SIA918EDJ-T1-GE3 Datasheet Page 4 SIA918EDJ-T1-GE3 Datasheet Page 5 SIA918EDJ-T1-GE3 Datasheet Page 6 SIA918EDJ-T1-GE3 Datasheet Page 7 SIA918EDJ-T1-GE3 Datasheet Page 8 SIA918EDJ-T1-GE3 Datasheet Page 9

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SIA918EDJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Rds On (Max) @ Id, Vgs58mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max7.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

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