HTMN5130SSD-13
For Reference Only
| Part Number | HTMN5130SSD-13 |
| PNEDA Part # | HTMN5130SSD-13 |
| Description | MOSFET 2N-CH 55V 2.6A 8SOIC |
| Manufacturer | Diodes Incorporated |
| Unit Price | Request a Quote |
| In Stock | 5,598 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
HTMN5130SSD-13 Resources
| Brand | Diodes Incorporated |
| ECAD Module |
|
| Mfr. Part Number | HTMN5130SSD-13 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- HTMN5130SSD-13 Datasheet
- where to find HTMN5130SSD-13
- Diodes Incorporated
- Diodes Incorporated HTMN5130SSD-13
- HTMN5130SSD-13 PDF Datasheet
- HTMN5130SSD-13 Stock
- HTMN5130SSD-13 Pinout
- Datasheet HTMN5130SSD-13
- HTMN5130SSD-13 Supplier
- Diodes Incorporated Distributor
- HTMN5130SSD-13 Price
- HTMN5130SSD-13 Distributor
HTMN5130SSD-13 Specifications
| Manufacturer | Diodes Incorporated |
| Series | - |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.9nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 218.7pF @ 25V |
| Power - Max | 1.7W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series - FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.3A Rds On (Max) @ Id, Vgs 200mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 300pF @ 10V Power - Max 500mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-UFDFN Exposed Pad Supplier Device Package 6-UDFN (1.6x1.6) |
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type N and P-Channel Complementary FET Feature Standard Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 680mA (Ta), 460mA (Ta) Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.64nC @ 4.5V, 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V, 63pF @ 10V Power - Max 700mW Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package TSOT-26 |
Manufacturer Rohm Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 200mA Rds On (Max) @ Id, Vgs 2.2Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 25pF @ 10V Power - Max 120mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package UMT6 |
Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 13.5mOhm @ 7A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V Power - Max 3.9W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10A (Ta), 40A (Ta) Rds On (Max) @ Id, Vgs 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V Vgs(th) (Max) @ Id 2.5V @ 4mA, 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 15V, 19nC @ 15V Input Capacitance (Ciss) (Max) @ Vds 475pF @ 15V, 1960pF @ 15V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
