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SI6943BDQ-T1-E3

SI6943BDQ-T1-E3

For Reference Only

Part Number SI6943BDQ-T1-E3
PNEDA Part # SI6943BDQ-T1-E3
Description MOSFET 2P-CH 12V 2.3A 8TSSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,776
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI6943BDQ-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI6943BDQ-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI6943BDQ-T1-E3, SI6943BDQ-T1-E3 Datasheet (Total Pages: 6, Size: 107.06 KB)
PDFSI6943BDQ-T1-GE3 Datasheet Cover
SI6943BDQ-T1-GE3 Datasheet Page 2 SI6943BDQ-T1-GE3 Datasheet Page 3 SI6943BDQ-T1-GE3 Datasheet Page 4 SI6943BDQ-T1-GE3 Datasheet Page 5 SI6943BDQ-T1-GE3 Datasheet Page 6

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SI6943BDQ-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C2.3A
Rds On (Max) @ Id, Vgs80mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max800mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

11.6A

Rds On (Max) @ Id, Vgs

18.5mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 1mA

Gate Charge (Qg) (Max) @ Vgs

22.2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1450pF @ 16V

Power - Max

4.2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

10.4A

Rds On (Max) @ Id, Vgs

22mOhm @ 4.2A, 10V

Vgs(th) (Max) @ Id

1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

11.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

740pF @ 16V

Power - Max

4.2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP

FD6M043N08

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Power-SPM™

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

65A

Rds On (Max) @ Id, Vgs

4.3mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

148nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

6180pF @ 25V

Power - Max

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

EPM15

Supplier Device Package

EPM15

EFC4618R-P-TR

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate, 2.5V Drive

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

25.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.6W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

4-XBGA, 4-FCBGA

Supplier Device Package

EFCP1313-4CC-037

FDG6318P

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

500mA

Rds On (Max) @ Id, Vgs

780mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

83pF @ 10V

Power - Max

300mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88 (SC-70-6)

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