SIA918EDJ-T1-GE3 Datasheet
SIA918EDJ-T1-GE3 Datasheet
Total Pages: 9
Size: 380.79 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIA918EDJ-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) Rds On (Max) @ Id, Vgs 58mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 7.8W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SC-70-6 Dual Supplier Device Package PowerPAK® SC-70-6 Dual |
