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NTMS4706NR2G

NTMS4706NR2G

For Reference Only

Part Number NTMS4706NR2G
PNEDA Part # NTMS4706NR2G
Description MOSFET N-CH 30V 6.4A 8-SOIC
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,246
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
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NTMS4706NR2G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTMS4706NR2G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTMS4706NR2G, NTMS4706NR2G Datasheet (Total Pages: 6, Size: 67.76 KB)
PDFNTMS4706NR2G Datasheet Cover
NTMS4706NR2G Datasheet Page 2 NTMS4706NR2G Datasheet Page 3 NTMS4706NR2G Datasheet Page 4 NTMS4706NR2G Datasheet Page 5 NTMS4706NR2G Datasheet Page 6

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NTMS4706NR2G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs12mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds950pF @ 24V
FET Feature-
Power Dissipation (Max)830mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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