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IRF830L

IRF830L

For Reference Only

Part Number IRF830L
PNEDA Part # IRF830L
Description MOSFET N-CH 500V 4.5A TO-262
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,186
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF830L Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRF830L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF830L, IRF830L Datasheet (Total Pages: 8, Size: 178.62 KB)
PDFIRF830STRR Datasheet Cover
IRF830STRR Datasheet Page 2 IRF830STRR Datasheet Page 3 IRF830STRR Datasheet Page 4 IRF830STRR Datasheet Page 5 IRF830STRR Datasheet Page 6 IRF830STRR Datasheet Page 7 IRF830STRR Datasheet Page 8

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IRF830L Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds610pF @ 25V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 74W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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