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BYG10D-E3/TR

BYG10D-E3/TR BYG10D-E3/TR

For Reference Only

Part Number BYG10D-E3/TR
PNEDA Part # BYG10D-E3-TR
Description DIODE AVALANCHE 200V 1.5A
Manufacturer Vishay Semiconductor Diodes Division
Unit Price
1 ---------- $32.8292
100 ---------- $31.2903
250 ---------- $29.7514
500 ---------- $28.2126
750 ---------- $26.9302
1,000 ---------- $25.6478
In Stock 1
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BYG10D-E3/TR Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberBYG10D-E3/TR
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
BYG10D-E3/TR, BYG10D-E3/TR Datasheet (Total Pages: 5, Size: 100.2 KB)
PDFBYG10MHE3_A/I Datasheet Cover
BYG10MHE3_A/I Datasheet Page 2 BYG10MHE3_A/I Datasheet Page 3 BYG10MHE3_A/I Datasheet Page 4 BYG10MHE3_A/I Datasheet Page 5

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BYG10D-E3/TR Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeAvalanche
Voltage - DC Reverse (Vr) (Max)200V
Current - Average Rectified (Io)1.5A
Voltage - Forward (Vf) (Max) @ If1.15V @ 1.5A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)4µs
Current - Reverse Leakage @ Vr1µA @ 200V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseDO-214AC, SMA
Supplier Device PackageDO-214AC (SMA)
Operating Temperature - Junction-55°C ~ 150°C

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